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Epitaxial Ferroelectric Hf0.5Zr0.5O2 with Metallic Pyrochlore Oxide Electrodes

  • Zimeng Zhang
  • , Shang Lin Hsu
  • , Vladimir A. Stoica
  • , Hanjong Paik
  • , Eric Parsonnet
  • , Alexander Qualls
  • , Jianjun Wang
  • , Liang Xie
  • , Mukesh Kumari
  • , Sujit Das
  • , Zhinan Leng
  • , Martin McBriarty
  • , Roger Proksch
  • , Alexei Gruverman
  • , Darrell G. Schlom
  • , Long Qing Chen
  • , Sayeef Salahuddin
  • , Lane W. Martin
  • , Ramamoorthy Ramesh

Research output: Contribution to journalArticlepeer-review

Abstract

The synthesis of fully epitaxial ferroelectric Hf0.5Zr0.5O2 (HZO) thin films through the use of a conducting pyrochlore oxide electrode that acts as a structural and chemical template is reported. Such pyrochlores, exemplified by Pb2Ir2O7(PIO) and Bi2Ru2O7(BRO), exhibit metallic conductivity with room-temperature resistivity of <1 mΩ cm and are closely lattice matched to yttria-stabilized zirconia substrates as well as the HZO layers grown on top of them. Evidence for epitaxy and domain formation is established with X-ray diffraction and scanning transmission electron microscopy, which show that the c-axis of the HZO film is normal to the substrate surface. The emergence of the non-polar-monoclinic phase from the polar-orthorhombic phase is observed when the HZO film thickness is ≥≈30 nm. Thermodynamic analyses reveal the role of epitaxial strain and surface energy in stabilizing the polar phase as well as its coexistence with the non-polar-monoclinic phase as a function of film thickness.

Original languageEnglish (US)
Article number2006089
JournalAdvanced Materials
Volume33
Issue number10
DOIs
StatePublished - Mar 11 2021

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering

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