@inproceedings{de3c73a860b34f8db5d44e88e258a051,
title = "Epitaxial graphene growth on SiC wafers",
abstract = "An in vacuo thermal desorption process has been accomplished to form epitaxial graphene (EG) on 4H- and 6H-SiC substrates using a commercial chemical vapor deposition reactor. Correlation of growth conditions and the morphology and electrical properties of EG are described. Raman spectra of EG on Si-face samples were dominated by monolayer thickness. This approach was used to grow EG on 50 mm SiC wafers that were subsequently fabricated into field effect transistors with fmax of 14 GHz.",
author = "Gaskill, {D. K.} and Jernigan, {G. G.} and Campbell, {P. M.} and Tedesco, {J. L.} and Culbertson, {J. C.} and VanMil, {B. L.} and Myers-Ward, {R. L.} and Eddy, {C. R.} and J. Moon and D. Curtis and M. Hu and D. Wong and C. McGuire and Robinson, {J. A.} and Fanton, {M. A.} and Stitt, {J. P.} and T. Stitt and D. Snyder and X. Wang and E. Frantz",
year = "2009",
doi = "10.1149/1.3119535",
language = "English (US)",
isbn = "9781566777131",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "117--124",
booktitle = "ECS Transactions - Graphene and Emerging Materials for Post-CMOS Applications",
edition = "5",
note = "1st International Symposium on Emerging Materials for Post-CMOS Applications - 215th Meeting of the Electrochemical Society ; Conference date: 25-05-2009 Through 29-05-2009",
}