Epitaxial graphene materials integration: Effects of dielectric overlayers on structural and electronic properties

Joshua A. Robinson; Michael Labella; Kathleen A. Trumbull; Xiaojun Weng; Randall Cavelero; Tad Daniels; Zachary Hughes; Mathew Hollander; Mark Fanton; David Snyder

doi:10.1021/nn1003138

Epitaxial graphene materials integration: Effects of dielectric overlayers on structural and electronic properties

Joshua A. Robinson, Michael Labella, Kathleen A. Trumbull, Xiaojun Weng, Randall Cavelero, Tad Daniels, Zachary Hughes, Mathew Hollander, Mark Fanton, David Snyder

Research output: Contribution to journal › Article › peer-review

114 Scopus citations

Abstract

We present the integration of epitaxial graphene with thin film dielectric materials for the purpose of graphene transistor development. The impact on epitaxial graphene structural and electronic properties following deposition of Al₂O₃, HfO₂, TiO₂, and Ta ₂O₅ varies based on the choice of dielectric and deposition parameters. Each dielectric film requires the use of a nucleation layer to ensure uniform, continuous coverage on the graphene surface. Graphene quality degrades most severely following deposition of Ta₂O ₅, while the deposition if TiO₂ appears to improve the graphene carrier mobility. Finally, we discuss the potential of dielectric stack engineering for improved transistor performance.

Original language	English (US)
Pages (from-to)	2667-2672
Number of pages	6
Journal	ACS nano
Volume	4
Issue number	5
DOIs	https://doi.org/10.1021/nn1003138
State	Published - May 25 2010

All Science Journal Classification (ASJC) codes

General Materials Science
General Engineering
General Physics and Astronomy

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abstract = "We present the integration of epitaxial graphene with thin film dielectric materials for the purpose of graphene transistor development. The impact on epitaxial graphene structural and electronic properties following deposition of Al2O3, HfO2, TiO2, and Ta 2O5 varies based on the choice of dielectric and deposition parameters. Each dielectric film requires the use of a nucleation layer to ensure uniform, continuous coverage on the graphene surface. Graphene quality degrades most severely following deposition of Ta2O 5, while the deposition if TiO2 appears to improve the graphene carrier mobility. Finally, we discuss the potential of dielectric stack engineering for improved transistor performance.",

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AU - Robinson, Joshua A.

AU - Labella, Michael

AU - Trumbull, Kathleen A.

AU - Weng, Xiaojun

AU - Cavelero, Randall

AU - Daniels, Tad

AU - Hughes, Zachary

AU - Hollander, Mathew

AU - Fanton, Mark

AU - Snyder, David

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AB - We present the integration of epitaxial graphene with thin film dielectric materials for the purpose of graphene transistor development. The impact on epitaxial graphene structural and electronic properties following deposition of Al2O3, HfO2, TiO2, and Ta 2O5 varies based on the choice of dielectric and deposition parameters. Each dielectric film requires the use of a nucleation layer to ensure uniform, continuous coverage on the graphene surface. Graphene quality degrades most severely following deposition of Ta2O 5, while the deposition if TiO2 appears to improve the graphene carrier mobility. Finally, we discuss the potential of dielectric stack engineering for improved transistor performance.

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Epitaxial graphene materials integration: Effects of dielectric overlayers on structural and electronic properties

Abstract

All Science Journal Classification (ASJC) codes

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