Epitaxial graphene on SiC(0001̄): Stacking order and interfacial structure

Xiaojun Weng; Joshua A. Robinson; Kathleen Trumbull; Randall Cavalero; Mark A. Fanton; David Snyder

doi:10.1063/1.3678021

Epitaxial graphene on SiC(0001̄): Stacking order and interfacial structure

Xiaojun Weng, Joshua A. Robinson, Kathleen Trumbull, Randall Cavalero, Mark A. Fanton, David Snyder

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The fundamental structural properties of multilayer epitaxial graphene (MEG) on C-face SiC(0001̄) were revealed in a straightforward manner using cross-sectional transmission electron microscopy (TEM) and scanning TEM (STEM). The AB-stacking and the azimuthal rotational disorder of the graphene layers were directly identified by selected area electron diffraction and high-resolution TEM. The directly interpretable STEM revealed that the interlayer spacing between the first graphene layer and the top SiC bilayer is substantially larger than that of the bulk graphite. Such a large interlayer spacing combined with the regional partially decomposed top bilayers of the SiC substrate provides a plausible explanation to the weak bonding between the MEG film and the SiC(0001̄) substrate.

Original language	English (US)
Article number	031904
Journal	Applied Physics Letters
Volume	100
Issue number	3
DOIs	https://doi.org/10.1063/1.3678021
State	Published - Jan 16 2012

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3678021

Cite this

@article{8f810512e84448abba41bf60c7f54386,

title = "Epitaxial graphene on SiC(000{\=1}): Stacking order and interfacial structure",

abstract = "The fundamental structural properties of multilayer epitaxial graphene (MEG) on C-face SiC(000{\=1}) were revealed in a straightforward manner using cross-sectional transmission electron microscopy (TEM) and scanning TEM (STEM). The AB-stacking and the azimuthal rotational disorder of the graphene layers were directly identified by selected area electron diffraction and high-resolution TEM. The directly interpretable STEM revealed that the interlayer spacing between the first graphene layer and the top SiC bilayer is substantially larger than that of the bulk graphite. Such a large interlayer spacing combined with the regional partially decomposed top bilayers of the SiC substrate provides a plausible explanation to the weak bonding between the MEG film and the SiC(000{\=1}) substrate.",

author = "Xiaojun Weng and Robinson, {Joshua A.} and Kathleen Trumbull and Randall Cavalero and Fanton, {Mark A.} and David Snyder",

note = "Funding Information: This work was supported by the Naval Surface Warfare Center Crane, Contract No. N00164-09-C-GR34. The TEM/STEM work was performed in the Materials Characterization Laboratory (MCL) at the Pennsylvania State University.",

year = "2012",

month = jan,

day = "16",

doi = "10.1063/1.3678021",

language = "English (US)",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "3",

}

TY - JOUR

T1 - Epitaxial graphene on SiC(0001̄)

T2 - Stacking order and interfacial structure

AU - Weng, Xiaojun

AU - Robinson, Joshua A.

AU - Trumbull, Kathleen

AU - Cavalero, Randall

AU - Fanton, Mark A.

AU - Snyder, David

N1 - Funding Information: This work was supported by the Naval Surface Warfare Center Crane, Contract No. N00164-09-C-GR34. The TEM/STEM work was performed in the Materials Characterization Laboratory (MCL) at the Pennsylvania State University.

PY - 2012/1/16

Y1 - 2012/1/16

N2 - The fundamental structural properties of multilayer epitaxial graphene (MEG) on C-face SiC(0001̄) were revealed in a straightforward manner using cross-sectional transmission electron microscopy (TEM) and scanning TEM (STEM). The AB-stacking and the azimuthal rotational disorder of the graphene layers were directly identified by selected area electron diffraction and high-resolution TEM. The directly interpretable STEM revealed that the interlayer spacing between the first graphene layer and the top SiC bilayer is substantially larger than that of the bulk graphite. Such a large interlayer spacing combined with the regional partially decomposed top bilayers of the SiC substrate provides a plausible explanation to the weak bonding between the MEG film and the SiC(0001̄) substrate.

AB - The fundamental structural properties of multilayer epitaxial graphene (MEG) on C-face SiC(0001̄) were revealed in a straightforward manner using cross-sectional transmission electron microscopy (TEM) and scanning TEM (STEM). The AB-stacking and the azimuthal rotational disorder of the graphene layers were directly identified by selected area electron diffraction and high-resolution TEM. The directly interpretable STEM revealed that the interlayer spacing between the first graphene layer and the top SiC bilayer is substantially larger than that of the bulk graphite. Such a large interlayer spacing combined with the regional partially decomposed top bilayers of the SiC substrate provides a plausible explanation to the weak bonding between the MEG film and the SiC(0001̄) substrate.

UR - http://www.scopus.com/inward/record.url?scp=84856500010&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84856500010&partnerID=8YFLogxK

U2 - 10.1063/1.3678021

DO - 10.1063/1.3678021

M3 - Article

AN - SCOPUS:84856500010

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 031904

ER -

Epitaxial graphene on SiC(0001̄): Stacking order and interfacial structure

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this