Epitaxial growth of (001)-oriented and (110)-oriented SrBi2Ta2O9 thin films

J. Lettieri; Y. Jia; M. Urbanik; C. I. Weber; J. P. Maria; D. G. Schlom; H. Li; R. Ramesh; R. Uecker; P. Reiche

doi:10.1063/1.122631

Epitaxial growth of (001)-oriented and (110)-oriented SrBi₂Ta₂O₉ thin films

J. Lettieri, Y. Jia, M. Urbanik, C. I. Weber, J. P. Maria, D. G. Schlom, H. Li, R. Ramesh, R. Uecker, P. Reiche

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

74 Scopus citations

Abstract

Epitaxial SrBi₂Ta₂O₉ thin films have been grown with (001) and (110) orientations by pulsed laser deposition on (001) LaAlO₃-Sr₂AlTaO₆ and (100) LaSrAlO₄ substrates, respectively. Four-circle x-ray diffraction and transmission electron microscopy reveal nearly phase pure epitaxial films. Minimization of surface mesh mismatch between the film and substrate (i.e., choice of appropriate substrate material and orientation) was used to stabilize the desired orientations and achieve epitaxial growth.

Original language	English (US)
Pages (from-to)	2923-2925
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	20
DOIs	https://doi.org/10.1063/1.122631
State	Published - 1998

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.122631

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title = "Epitaxial growth of (001)-oriented and (110)-oriented SrBi2Ta2O9 thin films",

abstract = "Epitaxial SrBi2Ta2O9 thin films have been grown with (001) and (110) orientations by pulsed laser deposition on (001) LaAlO3-Sr2AlTaO6 and (100) LaSrAlO4 substrates, respectively. Four-circle x-ray diffraction and transmission electron microscopy reveal nearly phase pure epitaxial films. Minimization of surface mesh mismatch between the film and substrate (i.e., choice of appropriate substrate material and orientation) was used to stabilize the desired orientations and achieve epitaxial growth.",

author = "J. Lettieri and Y. Jia and M. Urbanik and Weber, {C. I.} and Maria, {J. P.} and Schlom, {D. G.} and H. Li and R. Ramesh and R. Uecker and P. Reiche",

year = "1998",

doi = "10.1063/1.122631",

language = "English (US)",

volume = "73",

pages = "2923--2925",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Epitaxial growth of (001)-oriented and (110)-oriented SrBi2Ta2O9 thin films

AU - Lettieri, J.

AU - Jia, Y.

AU - Urbanik, M.

AU - Weber, C. I.

AU - Maria, J. P.

AU - Schlom, D. G.

AU - Li, H.

AU - Ramesh, R.

AU - Uecker, R.

AU - Reiche, P.

PY - 1998

Y1 - 1998

N2 - Epitaxial SrBi2Ta2O9 thin films have been grown with (001) and (110) orientations by pulsed laser deposition on (001) LaAlO3-Sr2AlTaO6 and (100) LaSrAlO4 substrates, respectively. Four-circle x-ray diffraction and transmission electron microscopy reveal nearly phase pure epitaxial films. Minimization of surface mesh mismatch between the film and substrate (i.e., choice of appropriate substrate material and orientation) was used to stabilize the desired orientations and achieve epitaxial growth.

AB - Epitaxial SrBi2Ta2O9 thin films have been grown with (001) and (110) orientations by pulsed laser deposition on (001) LaAlO3-Sr2AlTaO6 and (100) LaSrAlO4 substrates, respectively. Four-circle x-ray diffraction and transmission electron microscopy reveal nearly phase pure epitaxial films. Minimization of surface mesh mismatch between the film and substrate (i.e., choice of appropriate substrate material and orientation) was used to stabilize the desired orientations and achieve epitaxial growth.

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M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Epitaxial growth of (001)-oriented and (110)-oriented SrBi₂Ta₂O₉ thin films

Abstract

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