Epitaxial growth of engineered metals for mid-infrared plasmonics

Stephanie Law; Lan Yu; Daniel Wasserman

doi:10.1116/1.4797487

Epitaxial growth of engineered metals for mid-infrared plasmonics

Stephanie Law, Lan Yu, Daniel Wasserman

Research output: Contribution to journal › Article › peer-review

53 Scopus citations

Abstract

The authors demonstrate the ability of high-quality epitaxial InAs films to be used as wavelength-flexible, low-loss, engineered plasmonic metals across the mid-infrared spectral range. Films are grown by molecular beam epitaxy and characterized by Hall effect measurements, atomic force microscopy, and infrared reflection and transmission spectroscopy. The losses of our plasmonic material are studied as a function of InAs doping density, growth rate, buffer layer type, and substrate type. High growth rates are shown to be integral to obtaining films with low losses and doping densities approaching 1 × 10 20 cm^-3.

Original language	English (US)
Article number	03C121
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	31
Issue number	3
DOIs	https://doi.org/10.1116/1.4797487
State	Published - May 2013

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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@article{6e3d40dfd30648618d14507fcb666da9,

title = "Epitaxial growth of engineered metals for mid-infrared plasmonics",

abstract = "The authors demonstrate the ability of high-quality epitaxial InAs films to be used as wavelength-flexible, low-loss, engineered plasmonic metals across the mid-infrared spectral range. Films are grown by molecular beam epitaxy and characterized by Hall effect measurements, atomic force microscopy, and infrared reflection and transmission spectroscopy. The losses of our plasmonic material are studied as a function of InAs doping density, growth rate, buffer layer type, and substrate type. High growth rates are shown to be integral to obtaining films with low losses and doping densities approaching 1 × 10 20 cm-3.",

author = "Stephanie Law and Lan Yu and Daniel Wasserman",

note = "Funding Information: The authors would like to acknowledge support from AFOSR Young Investigator Program (Award FA9550-10-1-0226) and NSF (Award ECCS-0925542). ",

year = "2013",

month = may,

doi = "10.1116/1.4797487",

language = "English (US)",

volume = "31",

journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",

issn = "2166-2746",

publisher = "AVS Science and Technology Society",

number = "3",

}

TY - JOUR

T1 - Epitaxial growth of engineered metals for mid-infrared plasmonics

AU - Law, Stephanie

AU - Yu, Lan

AU - Wasserman, Daniel

N1 - Funding Information: The authors would like to acknowledge support from AFOSR Young Investigator Program (Award FA9550-10-1-0226) and NSF (Award ECCS-0925542).

PY - 2013/5

Y1 - 2013/5

N2 - The authors demonstrate the ability of high-quality epitaxial InAs films to be used as wavelength-flexible, low-loss, engineered plasmonic metals across the mid-infrared spectral range. Films are grown by molecular beam epitaxy and characterized by Hall effect measurements, atomic force microscopy, and infrared reflection and transmission spectroscopy. The losses of our plasmonic material are studied as a function of InAs doping density, growth rate, buffer layer type, and substrate type. High growth rates are shown to be integral to obtaining films with low losses and doping densities approaching 1 × 10 20 cm-3.

AB - The authors demonstrate the ability of high-quality epitaxial InAs films to be used as wavelength-flexible, low-loss, engineered plasmonic metals across the mid-infrared spectral range. Films are grown by molecular beam epitaxy and characterized by Hall effect measurements, atomic force microscopy, and infrared reflection and transmission spectroscopy. The losses of our plasmonic material are studied as a function of InAs doping density, growth rate, buffer layer type, and substrate type. High growth rates are shown to be integral to obtaining films with low losses and doping densities approaching 1 × 10 20 cm-3.

UR - http://www.scopus.com/inward/record.url?scp=84878357593&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84878357593&partnerID=8YFLogxK

U2 - 10.1116/1.4797487

DO - 10.1116/1.4797487

M3 - Article

AN - SCOPUS:84878357593

SN - 2166-2746

VL - 31

JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

IS - 3

M1 - 03C121

ER -

Epitaxial growth of engineered metals for mid-infrared plasmonics

Abstract

All Science Journal Classification (ASJC) codes

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