Epitaxial growth of engineered metals for mid-infrared plasmonics

Stephanie Law, Lan Yu, Daniel Wasserman

Research output: Contribution to journalArticlepeer-review

50 Scopus citations


The authors demonstrate the ability of high-quality epitaxial InAs films to be used as wavelength-flexible, low-loss, engineered plasmonic metals across the mid-infrared spectral range. Films are grown by molecular beam epitaxy and characterized by Hall effect measurements, atomic force microscopy, and infrared reflection and transmission spectroscopy. The losses of our plasmonic material are studied as a function of InAs doping density, growth rate, buffer layer type, and substrate type. High growth rates are shown to be integral to obtaining films with low losses and doping densities approaching 1 × 10 20 cm-3.

Original languageEnglish (US)
Article number03C121
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Issue number3
StatePublished - May 2013

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


Dive into the research topics of 'Epitaxial growth of engineered metals for mid-infrared plasmonics'. Together they form a unique fingerprint.

Cite this