Epitaxial growth of lanthanide oxides La2O3 and Sc2O3 on GaN

Jesse S. Jur; Virginia D. Wheeler; Daniel J. Lichtenwalner; Jon Paul Maria; Mark A.L. Johnson

doi:10.1063/1.3541883

Epitaxial growth of lanthanide oxides La₂O₃ and Sc₂O₃ on GaN

Jesse S. Jur, Virginia D. Wheeler, Daniel J. Lichtenwalner, Jon Paul Maria, Mark A.L. Johnson

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Deposition of lanthanide oxides on GaN is investigated as a means to produce stable dielectric with good interface quality. Epitaxial growth of cubic 〈 111 〉 -oriented Sc₂ O₃ is observed on GaN [0001] with a lattice mismatch of 7.2%, whereas La₂O₃ growth, with a lattice mismatch of ∼21%, results in a mixed phase epitaxial film comprised of the bixbyite and hexagonal allotropes. Substantial roughening accompanies this mixed phase film. By inserting a thin Sc₂ O ₃ interfacial layer between La₂O₃ and GaN and a Sc₂ O₃ capping layer, the crystal quality of the predominantly La₂O₃ layer is improved and the stack is stabilized against hydroxide formation under ambient conditions.

Original language	English (US)
Article number	042902
Journal	Applied Physics Letters
Volume	98
Issue number	4
DOIs	https://doi.org/10.1063/1.3541883
State	Published - Jan 24 2011

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3541883

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title = "Epitaxial growth of lanthanide oxides La2O3 and Sc2O3 on GaN",

abstract = "Deposition of lanthanide oxides on GaN is investigated as a means to produce stable dielectric with good interface quality. Epitaxial growth of cubic 〈 111 〉 -oriented Sc2 O3 is observed on GaN [0001] with a lattice mismatch of 7.2%, whereas La2O3 growth, with a lattice mismatch of ∼21%, results in a mixed phase epitaxial film comprised of the bixbyite and hexagonal allotropes. Substantial roughening accompanies this mixed phase film. By inserting a thin Sc2 O 3 interfacial layer between La2O3 and GaN and a Sc2 O3 capping layer, the crystal quality of the predominantly La2O3 layer is improved and the stack is stabilized against hydroxide formation under ambient conditions.",

author = "Jur, {Jesse S.} and Wheeler, {Virginia D.} and Lichtenwalner, {Daniel J.} and Maria, {Jon Paul} and Johnson, {Mark A.L.}",

note = "Funding Information: The authors would like to thank Michelle Casper for assistance with the XRD analysis. This work was financed by DARPA/MTO Young Faculty Award No. W911NF-07–1–0156 and the National Science Foundation DMR Grant No. 0547134.",

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AU - Jur, Jesse S.

AU - Wheeler, Virginia D.

AU - Lichtenwalner, Daniel J.

AU - Maria, Jon Paul

AU - Johnson, Mark A.L.

N1 - Funding Information: The authors would like to thank Michelle Casper for assistance with the XRD analysis. This work was financed by DARPA/MTO Young Faculty Award No. W911NF-07–1–0156 and the National Science Foundation DMR Grant No. 0547134.

PY - 2011/1/24

Y1 - 2011/1/24

N2 - Deposition of lanthanide oxides on GaN is investigated as a means to produce stable dielectric with good interface quality. Epitaxial growth of cubic 〈 111 〉 -oriented Sc2 O3 is observed on GaN [0001] with a lattice mismatch of 7.2%, whereas La2O3 growth, with a lattice mismatch of ∼21%, results in a mixed phase epitaxial film comprised of the bixbyite and hexagonal allotropes. Substantial roughening accompanies this mixed phase film. By inserting a thin Sc2 O 3 interfacial layer between La2O3 and GaN and a Sc2 O3 capping layer, the crystal quality of the predominantly La2O3 layer is improved and the stack is stabilized against hydroxide formation under ambient conditions.

AB - Deposition of lanthanide oxides on GaN is investigated as a means to produce stable dielectric with good interface quality. Epitaxial growth of cubic 〈 111 〉 -oriented Sc2 O3 is observed on GaN [0001] with a lattice mismatch of 7.2%, whereas La2O3 growth, with a lattice mismatch of ∼21%, results in a mixed phase epitaxial film comprised of the bixbyite and hexagonal allotropes. Substantial roughening accompanies this mixed phase film. By inserting a thin Sc2 O 3 interfacial layer between La2O3 and GaN and a Sc2 O3 capping layer, the crystal quality of the predominantly La2O3 layer is improved and the stack is stabilized against hydroxide formation under ambient conditions.

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Epitaxial growth of lanthanide oxides La₂O₃ and Sc₂O₃ on GaN

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