Epitaxial growth of magnesium diboride thin films by hybrid physical-chemical vapor deposition

J. M. Redwing, A. Pogrebnyakov, S. Raghavan, J. E. Jones, X. X. Xi, S. V. Xu, Qi Li, Z. K. Liu, V. Vaithyanathan, D. G. Schlom

Research output: Contribution to journalConference articlepeer-review

Abstract

The effect of the substrates on the structural and electrical properties of MgB 2 thin films deposited by HPCVD was discussed. Epitaxial MgB 2 layers were obtained on SiC, sapphire and on AIN epitaxial layers deposited by MOCVD on SiC substrates. MgB 2 films deposited on SiC substrates consistently had higher critical temperature than films deposited on sapphire. It was found that hydrostatic stress in a compression of the MgB 2 lattice to leads to decrease in Tc.

Original languageEnglish (US)
Article numberEE7.3
Pages (from-to)153-155
Number of pages3
JournalMaterials Research Society Symposium Proceedings
VolumeEXS
Issue number3
StatePublished - 2004
Event2003 MRS Fall Meeting - Boston, MA, United States
Duration: Dec 1 2003Dec 4 2003

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint

Dive into the research topics of 'Epitaxial growth of magnesium diboride thin films by hybrid physical-chemical vapor deposition'. Together they form a unique fingerprint.

Cite this