Abstract
The effect of the substrates on the structural and electrical properties of MgB 2 thin films deposited by HPCVD was discussed. Epitaxial MgB 2 layers were obtained on SiC, sapphire and on AIN epitaxial layers deposited by MOCVD on SiC substrates. MgB 2 films deposited on SiC substrates consistently had higher critical temperature than films deposited on sapphire. It was found that hydrostatic stress in a compression of the MgB 2 lattice to leads to decrease in Tc.
Original language | English (US) |
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Article number | EE7.3 |
Pages (from-to) | 153-155 |
Number of pages | 3 |
Journal | Materials Research Society Symposium Proceedings |
Volume | EXS |
Issue number | 3 |
State | Published - 2004 |
Event | 2003 MRS Fall Meeting - Boston, MA, United States Duration: Dec 1 2003 → Dec 4 2003 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering