Epitaxial growth of magnesium diboride thin films by hybrid physical-chemical vapor deposition

J. M. Redwing; A. Pogrebnyakov; S. Raghavan; J. E. Jones; X. X. Xi; S. V. Xu; Qi Li; Z. K. Liu; V. Vaithyanathan; D. G. Schlom

Epitaxial growth of magnesium diboride thin films by hybrid physical-chemical vapor deposition

J. M. Redwing
, A. Pogrebnyakov
, S. Raghavan
, J. E. Jones
, X. X. Xi
, S. V. Xu
, Qi Li
, Z. K. Liu
, V. Vaithyanathan
, D. G. Schlom

Research output: Contribution to journal › Conference article › peer-review

Abstract

The effect of the substrates on the structural and electrical properties of MgB ₂ thin films deposited by HPCVD was discussed. Epitaxial MgB ₂ layers were obtained on SiC, sapphire and on AIN epitaxial layers deposited by MOCVD on SiC substrates. MgB ₂ films deposited on SiC substrates consistently had higher critical temperature than films deposited on sapphire. It was found that hydrostatic stress in a compression of the MgB ₂ lattice to leads to decrease in Tc.

Original language	English (US)
Article number	EE7.3
Pages (from-to)	153-155
Number of pages	3
Journal	Materials Research Society Symposium Proceedings
Volume	EXS
Issue number	3
State	Published - 2004
Event	2003 MRS Fall Meeting - Boston, MA, United States Duration: Dec 1 2003 → Dec 4 2003

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{776329720ffa4c3ebeb0f50faab9854b,

title = "Epitaxial growth of magnesium diboride thin films by hybrid physical-chemical vapor deposition",

abstract = "The effect of the substrates on the structural and electrical properties of MgB 2 thin films deposited by HPCVD was discussed. Epitaxial MgB 2 layers were obtained on SiC, sapphire and on AIN epitaxial layers deposited by MOCVD on SiC substrates. MgB 2 films deposited on SiC substrates consistently had higher critical temperature than films deposited on sapphire. It was found that hydrostatic stress in a compression of the MgB 2 lattice to leads to decrease in Tc.",

author = "Redwing, \{J. M.\} and A. Pogrebnyakov and S. Raghavan and Jones, \{J. E.\} and Xi, \{X. X.\} and Xu, \{S. V.\} and Qi Li and Liu, \{Z. K.\} and V. Vaithyanathan and Schlom, \{D. G.\}",

year = "2004",

language = "English (US)",

volume = "EXS",

pages = "153--155",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

number = "3",

note = "2003 MRS Fall Meeting ; Conference date: 01-12-2003 Through 04-12-2003",

}

TY - JOUR

T1 - Epitaxial growth of magnesium diboride thin films by hybrid physical-chemical vapor deposition

AU - Redwing, J. M.

AU - Pogrebnyakov, A.

AU - Raghavan, S.

AU - Jones, J. E.

AU - Xi, X. X.

AU - Xu, S. V.

AU - Li, Qi

AU - Liu, Z. K.

AU - Vaithyanathan, V.

AU - Schlom, D. G.

PY - 2004

Y1 - 2004

N2 - The effect of the substrates on the structural and electrical properties of MgB 2 thin films deposited by HPCVD was discussed. Epitaxial MgB 2 layers were obtained on SiC, sapphire and on AIN epitaxial layers deposited by MOCVD on SiC substrates. MgB 2 films deposited on SiC substrates consistently had higher critical temperature than films deposited on sapphire. It was found that hydrostatic stress in a compression of the MgB 2 lattice to leads to decrease in Tc.

AB - The effect of the substrates on the structural and electrical properties of MgB 2 thin films deposited by HPCVD was discussed. Epitaxial MgB 2 layers were obtained on SiC, sapphire and on AIN epitaxial layers deposited by MOCVD on SiC substrates. MgB 2 films deposited on SiC substrates consistently had higher critical temperature than films deposited on sapphire. It was found that hydrostatic stress in a compression of the MgB 2 lattice to leads to decrease in Tc.

UR - https://www.scopus.com/pages/publications/23844449353

UR - https://www.scopus.com/pages/publications/23844449353#tab=citedBy

M3 - Conference article

AN - SCOPUS:23844449353

SN - 0272-9172

VL - EXS

SP - 153

EP - 155

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

IS - 3

M1 - EE7.3

T2 - 2003 MRS Fall Meeting

Y2 - 1 December 2003 through 4 December 2003

ER -

Epitaxial growth of magnesium diboride thin films by hybrid physical-chemical vapor deposition

Abstract

All Science Journal Classification (ASJC) codes

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