Epitaxial growth of metastable Ba2RuO4 films with the K2NiF4 structure

Y. Jia; M. A. Zurbuchen; S. Wozniak; A. H. Carim; D. G. Schlom; Ling-nian Zou; S. Briczinski; Ying Liu

doi:10.1063/1.124194

Epitaxial growth of metastable Ba₂RuO₄ films with the K₂NiF₄ structure

Y. Jia, M. A. Zurbuchen, S. Wozniak, A. H. Carim, D. G. Schlom, Ling-nian Zou, S. Briczinski, Ying Liu

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16 Scopus citations

Abstract

Pulsed laser deposition on (100) SrTiO₃ substrates was used to grow epitaxial Ba₂RuO₄ films with K₂NiF₄ structure. Results of X-ray diffraction and cross-sectional electron microscopy studies showed that the films are c-axis oriented, single-domain and contain few stacking faults and intergrowths. Metallic conductivity to low temperatures were indicated by electrical measurements but no evidence of superconductivity.

Original language	English (US)
Pages (from-to)	3830-3832
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	25
DOIs	https://doi.org/10.1063/1.124194
State	Published - Jun 21 1999

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.124194

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title = "Epitaxial growth of metastable Ba2RuO4 films with the K2NiF4 structure",

abstract = "Pulsed laser deposition on (100) SrTiO3 substrates was used to grow epitaxial Ba2RuO4 films with K2NiF4 structure. Results of X-ray diffraction and cross-sectional electron microscopy studies showed that the films are c-axis oriented, single-domain and contain few stacking faults and intergrowths. Metallic conductivity to low temperatures were indicated by electrical measurements but no evidence of superconductivity.",

author = "Y. Jia and Zurbuchen, {M. A.} and S. Wozniak and Carim, {A. H.} and Schlom, {D. G.} and Ling-nian Zou and S. Briczinski and Ying Liu",

year = "1999",

month = jun,

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doi = "10.1063/1.124194",

language = "English (US)",

volume = "74",

pages = "3830--3832",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Epitaxial growth of metastable Ba2RuO4 films with the K2NiF4 structure

AU - Jia, Y.

AU - Zurbuchen, M. A.

AU - Wozniak, S.

AU - Carim, A. H.

AU - Schlom, D. G.

AU - Zou, Ling-nian

AU - Briczinski, S.

AU - Liu, Ying

PY - 1999/6/21

Y1 - 1999/6/21

N2 - Pulsed laser deposition on (100) SrTiO3 substrates was used to grow epitaxial Ba2RuO4 films with K2NiF4 structure. Results of X-ray diffraction and cross-sectional electron microscopy studies showed that the films are c-axis oriented, single-domain and contain few stacking faults and intergrowths. Metallic conductivity to low temperatures were indicated by electrical measurements but no evidence of superconductivity.

AB - Pulsed laser deposition on (100) SrTiO3 substrates was used to grow epitaxial Ba2RuO4 films with K2NiF4 structure. Results of X-ray diffraction and cross-sectional electron microscopy studies showed that the films are c-axis oriented, single-domain and contain few stacking faults and intergrowths. Metallic conductivity to low temperatures were indicated by electrical measurements but no evidence of superconductivity.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Epitaxial growth of metastable Ba₂RuO₄ films with the K₂NiF₄ structure

Abstract

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