Epitaxial growth of the metastable phase ytterbium monoxide on gallium nitride surfaces

Mark D. Losego, Seiji Mita, Ramon Collazo, Zlatko Sitar, Jon Paul Maria

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


Molecular beam deposition systems allow for unparalleled control of film composition and structure. This article addresses the capacity for controlling metal and oxidant fluxes in the Yb/O2 system to access the metastable phase ytterbium monoxide (YbO). Experiments exploring the growth of polycrystalline YbOx films by molecular beam deposition demonstrate that a 2:1 molar ratio of Yb:O2 fluxes is necessary to achieve preferential growth of the divalent oxide. Applying similar deposition conditions to a (0 0 1) GaN surface leads to the growth of epitaxial (1 1 1) YbO films. Similar to other rocksalt oxides grown on GaN surfaces, YbO films display a 3D growth mechanism that leads to a grainy morphology with crystallites of 50 nm lateral dimensions. Rocking curves in ω and φ have full-width half-maximum values of 1.77° and 4.1°, respectively; further improvements in crystal quality appear to be limited by the thermal stability of the YbO phase.

Original languageEnglish (US)
Pages (from-to)51-56
Number of pages6
JournalJournal of Crystal Growth
Issue number1
StatePublished - Jan 4 2008

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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