Epitaxial growth of wafer-scale transition metal dichalcogenide monolayers by metalorganic chemical vapor deposition

Nicholas Trainor; Chen Chen; Haoyue Zhu; Thomas V. Mc Knight; Tanushree Holme Choudhury; Joan M. Redwing

doi:10.1109/EDTM53872.2022.9797981

Epitaxial growth of wafer-scale transition metal dichalcogenide monolayers by metalorganic chemical vapor deposition

Nicholas Trainor, Chen Chen, Haoyue Zhu, Thomas V. Mc Knight, Tanushree Holme Choudhury, Joan M. Redwing

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

The epitaxial growth of wafer-scale semiconducting TMDs monolayers (MoS2, WS2, WSe2) on c-plane sapphire by metalorganic chemical vapor deposition (MOCVD) is demonstrated and the resulting structural and optical properties of the films are compared to elucidate trends based on metal and chalcogen species. The sulfur based TMDs exhibit improved epitaxy, fewer defects and increased photoluminescence intensity on sapphire compared to WSe2 which is attributed to a smaller effective lattice mismatch and improved stability.

Original language	English (US)
Title of host publication	6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	160-162
Number of pages	3
ISBN (Electronic)	9781665421775
DOIs	https://doi.org/10.1109/EDTM53872.2022.9797981
State	Published - 2022
Event	6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 - Virtual, Online, Japan Duration: Mar 6 2022 → Mar 9 2022

Publication series

Name	6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

Conference

Conference	6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
Country/Territory	Japan
City	Virtual, Online
Period	3/6/22 → 3/9/22

All Science Journal Classification (ASJC) codes

Process Chemistry and Technology
Hardware and Architecture
Electrical and Electronic Engineering
Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/EDTM53872.2022.9797981

Cite this

Trainor, N., Chen, C., Zhu, H., Mc Knight, T. V., Choudhury, T. H., & Redwing, J. M. (2022). Epitaxial growth of wafer-scale transition metal dichalcogenide monolayers by metalorganic chemical vapor deposition. In 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 (pp. 160-162). (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM53872.2022.9797981

Trainor, Nicholas ; Chen, Chen ; Zhu, Haoyue et al. / Epitaxial growth of wafer-scale transition metal dichalcogenide monolayers by metalorganic chemical vapor deposition. 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. pp. 160-162 (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022).

@inproceedings{d38329f6a47f401fa17bd24e81d16bcb,

title = "Epitaxial growth of wafer-scale transition metal dichalcogenide monolayers by metalorganic chemical vapor deposition",

abstract = "The epitaxial growth of wafer-scale semiconducting TMDs monolayers (MoS2, WS2, WSe2) on c-plane sapphire by metalorganic chemical vapor deposition (MOCVD) is demonstrated and the resulting structural and optical properties of the films are compared to elucidate trends based on metal and chalcogen species. The sulfur based TMDs exhibit improved epitaxy, fewer defects and increased photoluminescence intensity on sapphire compared to WSe2 which is attributed to a smaller effective lattice mismatch and improved stability.",

author = "Nicholas Trainor and Chen Chen and Haoyue Zhu and {Mc Knight}, {Thomas V.} and Choudhury, {Tanushree Holme} and Redwing, {Joan M.}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 ; Conference date: 06-03-2022 Through 09-03-2022",

year = "2022",

doi = "10.1109/EDTM53872.2022.9797981",

language = "English (US)",

series = "6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "160--162",

booktitle = "6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022",

address = "United States",

}

Trainor, N, Chen, C, Zhu, H, Mc Knight, TV, Choudhury, TH & Redwing, JM 2022, Epitaxial growth of wafer-scale transition metal dichalcogenide monolayers by metalorganic chemical vapor deposition. in 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022, Institute of Electrical and Electronics Engineers Inc., pp. 160-162, 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022, Virtual, Online, Japan, 3/6/22. https://doi.org/10.1109/EDTM53872.2022.9797981

Epitaxial growth of wafer-scale transition metal dichalcogenide monolayers by metalorganic chemical vapor deposition. / Trainor, Nicholas; Chen, Chen; Zhu, Haoyue et al.
6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 160-162 (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Epitaxial growth of wafer-scale transition metal dichalcogenide monolayers by metalorganic chemical vapor deposition

AU - Trainor, Nicholas

AU - Chen, Chen

AU - Zhu, Haoyue

AU - Mc Knight, Thomas V.

AU - Choudhury, Tanushree Holme

AU - Redwing, Joan M.

PY - 2022

Y1 - 2022

N2 - The epitaxial growth of wafer-scale semiconducting TMDs monolayers (MoS2, WS2, WSe2) on c-plane sapphire by metalorganic chemical vapor deposition (MOCVD) is demonstrated and the resulting structural and optical properties of the films are compared to elucidate trends based on metal and chalcogen species. The sulfur based TMDs exhibit improved epitaxy, fewer defects and increased photoluminescence intensity on sapphire compared to WSe2 which is attributed to a smaller effective lattice mismatch and improved stability.

AB - The epitaxial growth of wafer-scale semiconducting TMDs monolayers (MoS2, WS2, WSe2) on c-plane sapphire by metalorganic chemical vapor deposition (MOCVD) is demonstrated and the resulting structural and optical properties of the films are compared to elucidate trends based on metal and chalcogen species. The sulfur based TMDs exhibit improved epitaxy, fewer defects and increased photoluminescence intensity on sapphire compared to WSe2 which is attributed to a smaller effective lattice mismatch and improved stability.

UR - http://www.scopus.com/inward/record.url?scp=85133961257&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85133961257&partnerID=8YFLogxK

U2 - 10.1109/EDTM53872.2022.9797981

DO - 10.1109/EDTM53872.2022.9797981

M3 - Conference contribution

AN - SCOPUS:85133961257

T3 - 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

SP - 160

EP - 162

BT - 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

Y2 - 6 March 2022 through 9 March 2022

ER -

Trainor N, Chen C, Zhu H, Mc Knight TV, Choudhury TH, Redwing JM. Epitaxial growth of wafer-scale transition metal dichalcogenide monolayers by metalorganic chemical vapor deposition. In 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 160-162. (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022). doi: 10.1109/EDTM53872.2022.9797981

Epitaxial growth of wafer-scale transition metal dichalcogenide monolayers by metalorganic chemical vapor deposition

Abstract

Publication series

Conference

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this