Epitaxial InGaN on nitridated Si(111) for photovoltaic applications

Y. Yao; J. D. Aldous; D. Won; J. M. Redwing; W. Linhart; C. F. McConville; R. J. Reeves; T. D. Veal; S. M. Durbin

doi:10.1109/PVSC.2012.6318131

Epitaxial InGaN on nitridated Si(111) for photovoltaic applications

Y. Yao
, J. D. Aldous
, D. Won
, J. M. Redwing
, W. Linhart
, C. F. McConville
, R. J. Reeves
, T. D. Veal
, S. M. Durbin

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

There is great potential in using InGaN as an absorber material in photovoltaic cells, particularly when combined in a heterojunction with p-type Si. However, at typical growth temperatures, Ga and In easily form a eutectic with Si, which creates voids at the interface, resulting in a surface unsuitable for epitaxial growth. In this paper we demonstrate how a simple nitridation process of a Si(111) substrate at a temperature of 800°C results in the formation of crystalline SiN. The surface of the SiN layer is seen to be reconstructed, indicating the SiN is crystalline and well ordered. The interface between InGaN and SiN is seen to be sharp with no evidence of eutectic formation. The SiN layer is estimated to be ∼3 nm thick so is unlikely to significantly affect the electrical conductivity. The series resistance of a prototypical Si(111)/SiN/InGaN sample has been found to be 1.2 Ω.

Original language	English (US)
Title of host publication	Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages	2617-2620
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2012.6318131
State	Published - 2012
Event	38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States Duration: Jun 3 2012 → Jun 8 2012

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Country/Territory	United States
City	Austin, TX
Period	6/3/12 → 6/8/12

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2012.6318131

Cite this

Yao, Y., Aldous, J. D., Won, D., Redwing, J. M., Linhart, W., McConville, C. F., Reeves, R. J., Veal, T. D., & Durbin, S. M. (2012). Epitaxial InGaN on nitridated Si(111) for photovoltaic applications. In Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012 (pp. 2617-2620). Article 6318131 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2012.6318131

@inproceedings{394b9dbdeb4648928b387f173c0f3ac2,

title = "Epitaxial InGaN on nitridated Si(111) for photovoltaic applications",

abstract = "There is great potential in using InGaN as an absorber material in photovoltaic cells, particularly when combined in a heterojunction with p-type Si. However, at typical growth temperatures, Ga and In easily form a eutectic with Si, which creates voids at the interface, resulting in a surface unsuitable for epitaxial growth. In this paper we demonstrate how a simple nitridation process of a Si(111) substrate at a temperature of 800°C results in the formation of crystalline SiN. The surface of the SiN layer is seen to be reconstructed, indicating the SiN is crystalline and well ordered. The interface between InGaN and SiN is seen to be sharp with no evidence of eutectic formation. The SiN layer is estimated to be ∼3 nm thick so is unlikely to significantly affect the electrical conductivity. The series resistance of a prototypical Si(111)/SiN/InGaN sample has been found to be 1.2 Ω.",

author = "Y. Yao and Aldous, \{J. D.\} and D. Won and Redwing, \{J. M.\} and W. Linhart and McConville, \{C. F.\} and Reeves, \{R. J.\} and Veal, \{T. D.\} and Durbin, \{S. M.\}",

year = "2012",

doi = "10.1109/PVSC.2012.6318131",

language = "English (US)",

isbn = "9781467300643",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "2617--2620",

booktitle = "Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012",

}

Yao, Y, Aldous, JD, Won, D, Redwing, JM, Linhart, W, McConville, CF, Reeves, RJ, Veal, TD & Durbin, SM 2012, Epitaxial InGaN on nitridated Si(111) for photovoltaic applications. in Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012., 6318131, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 2617-2620, 38th IEEE Photovoltaic Specialists Conference, PVSC 2012, Austin, TX, United States, 6/3/12. https://doi.org/10.1109/PVSC.2012.6318131

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AU - Yao, Y.

AU - Aldous, J. D.

AU - Won, D.

AU - Redwing, J. M.

AU - Linhart, W.

AU - McConville, C. F.

AU - Reeves, R. J.

AU - Veal, T. D.

AU - Durbin, S. M.

PY - 2012

Y1 - 2012

N2 - There is great potential in using InGaN as an absorber material in photovoltaic cells, particularly when combined in a heterojunction with p-type Si. However, at typical growth temperatures, Ga and In easily form a eutectic with Si, which creates voids at the interface, resulting in a surface unsuitable for epitaxial growth. In this paper we demonstrate how a simple nitridation process of a Si(111) substrate at a temperature of 800°C results in the formation of crystalline SiN. The surface of the SiN layer is seen to be reconstructed, indicating the SiN is crystalline and well ordered. The interface between InGaN and SiN is seen to be sharp with no evidence of eutectic formation. The SiN layer is estimated to be ∼3 nm thick so is unlikely to significantly affect the electrical conductivity. The series resistance of a prototypical Si(111)/SiN/InGaN sample has been found to be 1.2 Ω.

AB - There is great potential in using InGaN as an absorber material in photovoltaic cells, particularly when combined in a heterojunction with p-type Si. However, at typical growth temperatures, Ga and In easily form a eutectic with Si, which creates voids at the interface, resulting in a surface unsuitable for epitaxial growth. In this paper we demonstrate how a simple nitridation process of a Si(111) substrate at a temperature of 800°C results in the formation of crystalline SiN. The surface of the SiN layer is seen to be reconstructed, indicating the SiN is crystalline and well ordered. The interface between InGaN and SiN is seen to be sharp with no evidence of eutectic formation. The SiN layer is estimated to be ∼3 nm thick so is unlikely to significantly affect the electrical conductivity. The series resistance of a prototypical Si(111)/SiN/InGaN sample has been found to be 1.2 Ω.

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ER -

Epitaxial InGaN on nitridated Si(111) for photovoltaic applications

Abstract

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