Epitaxial integration of dilute magnetic semiconductor Sr3SnO with Si (001)

Y. F. Lee; F. Wu; R. Kumar; F. Hunte; J. Schwartz; J. Narayan

doi:10.1063/1.4820770

Epitaxial integration of dilute magnetic semiconductor Sr₃SnO with Si (001)

Y. F. Lee
, F. Wu
, R. Kumar
, F. Hunte
, J. Schwartz
, J. Narayan

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

Epitaxial thin films heterostructures of topological insulator candidate Sr₃SnO (SSO) are grown on a cubic yttria-stabilized zirconia (c-YSZ)/Si (001) platform by pulsed laser deposition. X-ray and electron diffraction patterns confirm the epitaxial nature of the layers with cube-on-cube orientation relationship: (001)[100]SSO-(001)[100]c-YSZ-;(001)[100] Si. The temperature dependent electrical resistivity shows semiconductor behavior with a transport mechanism following the variable-range-hopping model. The SSO films show room-temperature ferromagnetism with a high saturation magnetization, and a finite non-zero coercivity persisting up to room temperature. These results indicate that SSO is a potential dilute magnetic semiconductor, presumably obtained by controlled introduction of intrinsic defects.

Original language	English (US)
Article number	112101
Journal	Applied Physics Letters
Volume	103
Issue number	11
DOIs	https://doi.org/10.1063/1.4820770
State	Published - Sep 9 2013

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4820770

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@article{e506b039370746478cfd870d118451ef,

title = "Epitaxial integration of dilute magnetic semiconductor Sr3SnO with Si (001)",

abstract = "Epitaxial thin films heterostructures of topological insulator candidate Sr3SnO (SSO) are grown on a cubic yttria-stabilized zirconia (c-YSZ)/Si (001) platform by pulsed laser deposition. X-ray and electron diffraction patterns confirm the epitaxial nature of the layers with cube-on-cube orientation relationship: (001)[100]SSO-(001)[100]c-YSZ-;(001)[100] Si. The temperature dependent electrical resistivity shows semiconductor behavior with a transport mechanism following the variable-range-hopping model. The SSO films show room-temperature ferromagnetism with a high saturation magnetization, and a finite non-zero coercivity persisting up to room temperature. These results indicate that SSO is a potential dilute magnetic semiconductor, presumably obtained by controlled introduction of intrinsic defects.",

author = "Lee, \{Y. F.\} and F. Wu and R. Kumar and F. Hunte and J. Schwartz and J. Narayan",

note = "Funding Information: This research was partially funded by the US National Science Foundation. The authors thank Dr. Jon-Paul Maria for use of the phi-scan system and Dr. Srinivasa Rao Singamaneni for the stimulating scientific discussion and critical reading of the manuscript. Also, the authors acknowledge the use of the Analytical Instrumentation Facility (AIF) at North Carolina State University, which is supported by the State of North Carolina and the National Science Foundation.",

year = "2013",

month = sep,

day = "9",

doi = "10.1063/1.4820770",

language = "English (US)",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Epitaxial integration of dilute magnetic semiconductor Sr3SnO with Si (001)

AU - Lee, Y. F.

AU - Wu, F.

AU - Kumar, R.

AU - Hunte, F.

AU - Schwartz, J.

AU - Narayan, J.

N1 - Funding Information: This research was partially funded by the US National Science Foundation. The authors thank Dr. Jon-Paul Maria for use of the phi-scan system and Dr. Srinivasa Rao Singamaneni for the stimulating scientific discussion and critical reading of the manuscript. Also, the authors acknowledge the use of the Analytical Instrumentation Facility (AIF) at North Carolina State University, which is supported by the State of North Carolina and the National Science Foundation.

PY - 2013/9/9

Y1 - 2013/9/9

N2 - Epitaxial thin films heterostructures of topological insulator candidate Sr3SnO (SSO) are grown on a cubic yttria-stabilized zirconia (c-YSZ)/Si (001) platform by pulsed laser deposition. X-ray and electron diffraction patterns confirm the epitaxial nature of the layers with cube-on-cube orientation relationship: (001)[100]SSO-(001)[100]c-YSZ-;(001)[100] Si. The temperature dependent electrical resistivity shows semiconductor behavior with a transport mechanism following the variable-range-hopping model. The SSO films show room-temperature ferromagnetism with a high saturation magnetization, and a finite non-zero coercivity persisting up to room temperature. These results indicate that SSO is a potential dilute magnetic semiconductor, presumably obtained by controlled introduction of intrinsic defects.

AB - Epitaxial thin films heterostructures of topological insulator candidate Sr3SnO (SSO) are grown on a cubic yttria-stabilized zirconia (c-YSZ)/Si (001) platform by pulsed laser deposition. X-ray and electron diffraction patterns confirm the epitaxial nature of the layers with cube-on-cube orientation relationship: (001)[100]SSO-(001)[100]c-YSZ-;(001)[100] Si. The temperature dependent electrical resistivity shows semiconductor behavior with a transport mechanism following the variable-range-hopping model. The SSO films show room-temperature ferromagnetism with a high saturation magnetization, and a finite non-zero coercivity persisting up to room temperature. These results indicate that SSO is a potential dilute magnetic semiconductor, presumably obtained by controlled introduction of intrinsic defects.

UR - https://www.scopus.com/pages/publications/84884273175

UR - https://www.scopus.com/pages/publications/84884273175#tab=citedBy

U2 - 10.1063/1.4820770

DO - 10.1063/1.4820770

M3 - Article

AN - SCOPUS:84884273175

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 112101

ER -

Epitaxial integration of dilute magnetic semiconductor Sr₃SnO with Si (001)

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