Epitaxial PbxZr1-xTiO3 on GaN

E. A. Paisley, H. S. Craft, M. D. Losego, H. Lu, A. Gruverman, R. Collazo, Z. Sitar, J. P. Maria

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9 Scopus citations


Epitaxial integration of PbxZr1-xTiO3 (PZT) (111) with GaN (0002) presents the possibility of polarity coupling across a functional-oxide/nitride heteropolar interface. This work describes the synthesis and characterization of such thin film heterostructures by magnetron sputtering, with specific attention given to process optimization. Using x-ray diffraction and electrical characterization, the growth of epitaxial PZT (∼250 nm) on GaN and PZT on MgO/GaN stacks was verified. A two-stage growth process was developed for epitaxial PZT with a deposition temperature of 300 °C and an ex-situ anneal at 650 °C, which was effective in mitigating interfacial reactions and promoting phase-pure perovskite growth. Electrical analysis of interdigital capacitors revealed a nonlinear and hysteretic dielectric response consistent with ferroelectric PZT. Piezoresponse force microscopy (PFM) characterization shows clear evidence of ferroelectric switching, and PFM hysteresis loop analysis shows minimal evidence for direct polarity coupling, but suggests that band offsets which accompany the oxide-nitride heterostructures influence switching.

Original languageEnglish (US)
Article number074107
JournalJournal of Applied Physics
Issue number7
StatePublished - Feb 21 2013

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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