Epitaxial Pb(Zr x,Ti 1-x)O 3 (0.30≤x≤0.63) films on (100)MgO substrates for energy harvesting applications

Charles B. Yeager, Susan Trolier-Mckinstry

Research output: Contribution to journalArticlepeer-review

30 Scopus citations


Piezoelectric energy harvesting systems are of interest as a long-term power source for low-power wireless sensors. Transduction from elastic to electrical energy depends on the product of the piezoelectric charge and voltage coefficients; optimization of this figure of merit is an essential step towards improved microelectromechanical energy harvesting devices. This work reports on the composition dependence on the dielectric and piezoelectric properties of epitaxial {001}Pb(Zr x, Ti 1-x)O 3 films grown by chemical solution deposition and crystallized at 650 °C on (100)Pt//(100)MgO substrates for 0.63≤ x≤0.30. The power generation figure of merit shows the greatest magnitude at compositions near x=0.52, for which e 31,f=-12 C/m 2 and ε r=420. Lattice parameters were determined as a function of [Zr] to assess when comparisons to single domain properties calculated from Landau-Devonshire theory were appropriate. Furthermore, films doped with 1 at.% Mn had the highest observed figure of merit, four times greater than of AlN.

Original languageEnglish (US)
Article number074107
JournalJournal of Applied Physics
Issue number7
StatePublished - Oct 1 2012

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


Dive into the research topics of 'Epitaxial Pb(Zr x,Ti 1-x)O 3 (0.30≤x≤0.63) films on (100)MgO substrates for energy harvesting applications'. Together they form a unique fingerprint.

Cite this