Erratum: Adsorption-controlled growth of Ga2O3by suboxide molecular-beam epitaxy (APL Materials (2021) 9 031101) DOI: 10.1063/5.0035469)

Patrick Vogt; Felix V.E. Hensling; Kathy Azizie; Celesta S. Chang; David Turner; Jisung Park; Jonathan P. McCandless; Hanjong Paik; Brandon J. Bocklund; Georg Hoffmann; Oliver Bierwagen; Debdeep Jena; Huili G. Xing; Shin Mou; David A. Muller; Shun Li Shang; Zi Kui Liu; Darrell G. Schlom

doi:10.1063/5.0050412

Erratum: Adsorption-controlled growth of Ga₂O₃by suboxide molecular-beam epitaxy (APL Materials (2021) 9 031101) DOI: 10.1063/5.0035469)

Patrick Vogt
, Felix V.E. Hensling
, Kathy Azizie
, Celesta S. Chang
, David Turner
, Jisung Park
, Jonathan P. McCandless
, Hanjong Paik
, Brandon J. Bocklund
, Georg Hoffmann
, Oliver Bierwagen
, Debdeep Jena
, Huili G. Xing
, Shin Mou
, David A. Muller
, Shun Li Shang
, Zi Kui Liu
, Darrell G. Schlom

Materials Science and Engineering

Research output: Contribution to journal › Comment/debate › peer-review

1 Scopus citations

Abstract

In the original article,1 the author Georg Hoffmann was misspelled as “Georg Hoffman.” The name appears correctly above.

Original language	English (US)
Article number	049901
Journal	APL Materials
Volume	9
Issue number	4
DOIs	https://doi.org/10.1063/5.0050412
State	Published - Apr 1 2021

All Science Journal Classification (ASJC) codes

General Materials Science
General Engineering

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10.1063/5.0050412

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Vogt, P., Hensling, F. V. E., Azizie, K., Chang, C. S., Turner, D., Park, J., McCandless, J. P., Paik, H., Bocklund, B. J., Hoffmann, G., Bierwagen, O., Jena, D., Xing, H. G., Mou, S., Muller, D. A., Shang, S. L., Liu, Z. K., & Schlom, D. G. (2021). Erratum: Adsorption-controlled growth of Ga₂O₃by suboxide molecular-beam epitaxy (APL Materials (2021) 9 031101) DOI: 10.1063/5.0035469). APL Materials, 9(4), Article 049901. https://doi.org/10.1063/5.0050412

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title = "Erratum: Adsorption-controlled growth of Ga2O3by suboxide molecular-beam epitaxy (APL Materials (2021) 9 031101) DOI: 10.1063/5.0035469)",

abstract = "In the original article,1 the author Georg Hoffmann was misspelled as “Georg Hoffman.” The name appears correctly above.",

author = "Patrick Vogt and Hensling, \{Felix V.E.\} and Kathy Azizie and Chang, \{Celesta S.\} and David Turner and Jisung Park and McCandless, \{Jonathan P.\} and Hanjong Paik and Bocklund, \{Brandon J.\} and Georg Hoffmann and Oliver Bierwagen and Debdeep Jena and Xing, \{Huili G.\} and Shin Mou and Muller, \{David A.\} and Shang, \{Shun Li\} and Liu, \{Zi Kui\} and Schlom, \{Darrell G.\}",

year = "2021",

month = apr,

day = "1",

doi = "10.1063/5.0050412",

language = "English (US)",

volume = "9",

journal = "APL Materials",

issn = "2166-532X",

publisher = "American Institute of Physics",

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}

Vogt, P, Hensling, FVE, Azizie, K, Chang, CS, Turner, D, Park, J, McCandless, JP, Paik, H, Bocklund, BJ, Hoffmann, G, Bierwagen, O, Jena, D, Xing, HG, Mou, S, Muller, DA, Shang, SL , Liu, ZK & Schlom, DG 2021, 'Erratum: Adsorption-controlled growth of Ga₂O₃by suboxide molecular-beam epitaxy (APL Materials (2021) 9 031101) DOI: 10.1063/5.0035469)', APL Materials, vol. 9, no. 4, 049901. https://doi.org/10.1063/5.0050412

TY - JOUR

T1 - Erratum

T2 - Adsorption-controlled growth of Ga2O3by suboxide molecular-beam epitaxy (APL Materials (2021) 9 031101) DOI: 10.1063/5.0035469)

AU - Vogt, Patrick

AU - Hensling, Felix V.E.

AU - Azizie, Kathy

AU - Chang, Celesta S.

AU - Turner, David

AU - Park, Jisung

AU - McCandless, Jonathan P.

AU - Paik, Hanjong

AU - Bocklund, Brandon J.

AU - Hoffmann, Georg

AU - Bierwagen, Oliver

AU - Jena, Debdeep

AU - Xing, Huili G.

AU - Mou, Shin

AU - Muller, David A.

AU - Shang, Shun Li

AU - Liu, Zi Kui

AU - Schlom, Darrell G.

PY - 2021/4/1

Y1 - 2021/4/1

N2 - In the original article,1 the author Georg Hoffmann was misspelled as “Georg Hoffman.” The name appears correctly above.

AB - In the original article,1 the author Georg Hoffmann was misspelled as “Georg Hoffman.” The name appears correctly above.

UR - https://www.scopus.com/pages/publications/85104053400

UR - https://www.scopus.com/pages/publications/85104053400#tab=citedBy

U2 - 10.1063/5.0050412

DO - 10.1063/5.0050412

M3 - Comment/debate

AN - SCOPUS:85104053400

SN - 2166-532X

VL - 9

JO - APL Materials

JF - APL Materials

IS - 4

M1 - 049901

ER -

Erratum: Adsorption-controlled growth of Ga₂O₃by suboxide molecular-beam epitaxy (APL Materials (2021) 9 031101) DOI: 10.1063/5.0035469)

Abstract

All Science Journal Classification (ASJC) codes

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