Erratum: "Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states" [Appl. Phys. Lett. 106, 152104 (2015)]

Junjie Wang; Daniel Rhodes; Simin Feng; Minh An T. Nguyen; K. Watanabe; T. Taniguchi; Thomas E. Mallouk; Mauricio Terrones; Luis Balicas; J. Zhu

doi:10.1063/1.4941993

Erratum: "Gate-modulated conductance of few-layer WSe₂ field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states" [Appl. Phys. Lett. 106, 152104 (2015)]

Junjie Wang
, Daniel Rhodes
, Simin Feng
, Minh An T. Nguyen
, K. Watanabe
, T. Taniguchi
, Thomas E. Mallouk
, Mauricio Terrones
, Luis Balicas
, J. Zhu

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English (US)
Article number	069901
Journal	Applied Physics Letters
Volume	108
Issue number	6
DOIs	https://doi.org/10.1063/1.4941993
State	Published - Feb 8 2016

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4941993

Cite this

Wang, J., Rhodes, D., Feng, S., Nguyen, M. A. T., Watanabe, K., Taniguchi, T., Mallouk, T. E., Terrones, M., Balicas, L., & Zhu, J. (2016). Erratum: "Gate-modulated conductance of few-layer WSe₂ field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states" [Appl. Phys. Lett. 106, 152104 (2015)]. Applied Physics Letters, 108(6), Article 069901. https://doi.org/10.1063/1.4941993

@article{6242d64b61b9486b89705d7898cf8058,

title = "Erratum: {"}Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states{"} [Appl. Phys. Lett. 106, 152104 (2015)]",

author = "Junjie Wang and Daniel Rhodes and Simin Feng and Nguyen, \{Minh An T.\} and K. Watanabe and T. Taniguchi and Mallouk, \{Thomas E.\} and Mauricio Terrones and Luis Balicas and J. Zhu",

year = "2016",

month = feb,

day = "8",

doi = "10.1063/1.4941993",

language = "English (US)",

volume = "108",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "6",

}

Wang, J, Rhodes, D, Feng, S, Nguyen, MAT, Watanabe, K, Taniguchi, T, Mallouk, TE, Terrones, M, Balicas, L & Zhu, J 2016, 'Erratum: "Gate-modulated conductance of few-layer WSe₂ field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states" [Appl. Phys. Lett. 106, 152104 (2015)]', Applied Physics Letters, vol. 108, no. 6, 069901. https://doi.org/10.1063/1.4941993

Erratum: "Gate-modulated conductance of few-layer WSe₂ field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states" [Appl. Phys. Lett. 106, 152104 (2015)]. / Wang, Junjie; Rhodes, Daniel; Feng, Simin et al.
In: Applied Physics Letters, Vol. 108, No. 6, 069901, 08.02.2016.

Research output: Contribution to journal › Comment/debate › peer-review

TY - JOUR

T1 - Erratum

T2 - "Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states" [Appl. Phys. Lett. 106, 152104 (2015)]

AU - Wang, Junjie

AU - Rhodes, Daniel

AU - Feng, Simin

AU - Nguyen, Minh An T.

AU - Watanabe, K.

AU - Taniguchi, T.

AU - Mallouk, Thomas E.

AU - Terrones, Mauricio

AU - Balicas, Luis

AU - Zhu, J.

PY - 2016/2/8

Y1 - 2016/2/8

UR - https://www.scopus.com/pages/publications/84958267693

UR - https://www.scopus.com/pages/publications/84958267693#tab=citedBy

U2 - 10.1063/1.4941993

DO - 10.1063/1.4941993

M3 - Comment/debate

AN - SCOPUS:84958267693

SN - 0003-6951

VL - 108

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 069901

ER -

Erratum: "Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states" [Appl. Phys. Lett. 106, 152104 (2015)]

All Science Journal Classification (ASJC) codes

Access to Document

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Cite this

Erratum: "Gate-modulated conductance of few-layer WSe₂ field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states" [Appl. Phys. Lett. 106, 152104 (2015)]