Erratum: Stability of ZrO2 layers on Si (001) during high-temperature anneals under reduced oxygen partial pressures (Journal of Applied Physics (2002) 92 (82))

Susanne Stemmer; Zhiqiang Chen; Ralf Keding; Jon Paul Maria; Dwi Wicaksana; Angus I. Kingon

doi:10.1063/1.1519098

Erratum: Stability of ZrO₂ layers on Si (001) during high-temperature anneals under reduced oxygen partial pressures (Journal of Applied Physics (2002) 92 (82))

Susanne Stemmer, Zhiqiang Chen, Ralf Keding, Jon Paul Maria, Dwi Wicaksana, Angus I. Kingon

Materials Science and Engineering

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English (US)
Pages (from-to)	6942
Number of pages	1
Journal	Journal of Applied Physics
Volume	92
Issue number	11
DOIs	https://doi.org/10.1063/1.1519098
State	Published - Dec 1 2002

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.1519098

Cite this

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AU - Keding, Ralf

AU - Maria, Jon Paul

AU - Wicaksana, Dwi

AU - Kingon, Angus I.

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Erratum: Stability of ZrO2 layers on Si (001) during high-temperature anneals under reduced oxygen partial pressures (Journal of Applied Physics (2002) 92 (82))

All Science Journal Classification (ASJC) codes

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Erratum: Stability of ZrO₂ layers on Si (001) during high-temperature anneals under reduced oxygen partial pressures (Journal of Applied Physics (2002) 92 (82))