Eu3+ activated GaN thin films grown on sapphire by pulsed laser deposition

Nestor Perea-Lopez; Jonathan H. Tao; Joanna McKittrick; Jan B. Talbot; M. Raukas; J. Laski; K. C. Mishra; Gustavo Hirata

doi:10.1002/pssc.200778625

Eu³⁺ activated GaN thin films grown on sapphire by pulsed laser deposition

Nestor Perea-Lopez, Jonathan H. Tao, Joanna McKittrick, Jan B. Talbot, M. Raukas, J. Laski, K. C. Mishra, Gustavo Hirata

Physics

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

By means of pulsed laser deposition, polycrystlline thin films of GaN doped with Eu³⁺ were grown on sapphire. The PLD target was formed in three steps. First, stoichiometric amounts of Ga₂O₃ and Eu ₂O₃ were dissolved in nitric acid, which produces Ga _(1-x)Eu_x(NO₃)₃. Next, the nitrates were oxidized in a tubular furnace with O₂ flow forming Ga _2(1-x)Eu_2xO₃. Finally, the oxide powder was flushed with anhydrous ammonia to produce the desired nitride product: Ga _(1-x)Eu_xN. Film growth was done in a stainless steel vacuum chamber partially filled with N₂ (400 mTorr). For the deposit, the 3^rd harmonic of a Nd:YAG laser (λ = 355 nm) was focused on the surface of the target. After deposition, annealing in NH₃ was required to produce films with pure GaN hexagonal phase. The luminescence of the film was characterized by photo- and cathodoluminescence. In addition, the chemical and structural properties were analyzed by X-ray diffraction, scanning electron microscopy and energy dispersive spectroscopy.

Original language	English (US)
Pages (from-to)	1756-1758
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	5
Issue number	6
DOIs	https://doi.org/10.1002/pssc.200778625
State	Published - 2008
Event	7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States Duration: Sep 16 2007 → Sep 21 2007

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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10.1002/pssc.200778625

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title = "Eu3+ activated GaN thin films grown on sapphire by pulsed laser deposition",

abstract = "By means of pulsed laser deposition, polycrystlline thin films of GaN doped with Eu3+ were grown on sapphire. The PLD target was formed in three steps. First, stoichiometric amounts of Ga2O3 and Eu 2O3 were dissolved in nitric acid, which produces Ga (1-x)Eux(NO3)3. Next, the nitrates were oxidized in a tubular furnace with O2 flow forming Ga 2(1-x)Eu2xO3. Finally, the oxide powder was flushed with anhydrous ammonia to produce the desired nitride product: Ga (1-x)EuxN. Film growth was done in a stainless steel vacuum chamber partially filled with N2 (400 mTorr). For the deposit, the 3rd harmonic of a Nd:YAG laser (λ = 355 nm) was focused on the surface of the target. After deposition, annealing in NH3 was required to produce films with pure GaN hexagonal phase. The luminescence of the film was characterized by photo- and cathodoluminescence. In addition, the chemical and structural properties were analyzed by X-ray diffraction, scanning electron microscopy and energy dispersive spectroscopy.",

author = "Nestor Perea-Lopez and Tao, {Jonathan H.} and Joanna McKittrick and Talbot, {Jan B.} and M. Raukas and J. Laski and Mishra, {K. C.} and Gustavo Hirata",

year = "2008",

doi = "10.1002/pssc.200778625",

language = "English (US)",

volume = "5",

pages = "1756--1758",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "6",

note = "7th International Conference of Nitride Semiconductors, ICNS-7 ; Conference date: 16-09-2007 Through 21-09-2007",

}

TY - JOUR

T1 - Eu3+ activated GaN thin films grown on sapphire by pulsed laser deposition

AU - Perea-Lopez, Nestor

AU - Tao, Jonathan H.

AU - McKittrick, Joanna

AU - Talbot, Jan B.

AU - Raukas, M.

AU - Laski, J.

AU - Mishra, K. C.

AU - Hirata, Gustavo

PY - 2008

Y1 - 2008

N2 - By means of pulsed laser deposition, polycrystlline thin films of GaN doped with Eu3+ were grown on sapphire. The PLD target was formed in three steps. First, stoichiometric amounts of Ga2O3 and Eu 2O3 were dissolved in nitric acid, which produces Ga (1-x)Eux(NO3)3. Next, the nitrates were oxidized in a tubular furnace with O2 flow forming Ga 2(1-x)Eu2xO3. Finally, the oxide powder was flushed with anhydrous ammonia to produce the desired nitride product: Ga (1-x)EuxN. Film growth was done in a stainless steel vacuum chamber partially filled with N2 (400 mTorr). For the deposit, the 3rd harmonic of a Nd:YAG laser (λ = 355 nm) was focused on the surface of the target. After deposition, annealing in NH3 was required to produce films with pure GaN hexagonal phase. The luminescence of the film was characterized by photo- and cathodoluminescence. In addition, the chemical and structural properties were analyzed by X-ray diffraction, scanning electron microscopy and energy dispersive spectroscopy.

AB - By means of pulsed laser deposition, polycrystlline thin films of GaN doped with Eu3+ were grown on sapphire. The PLD target was formed in three steps. First, stoichiometric amounts of Ga2O3 and Eu 2O3 were dissolved in nitric acid, which produces Ga (1-x)Eux(NO3)3. Next, the nitrates were oxidized in a tubular furnace with O2 flow forming Ga 2(1-x)Eu2xO3. Finally, the oxide powder was flushed with anhydrous ammonia to produce the desired nitride product: Ga (1-x)EuxN. Film growth was done in a stainless steel vacuum chamber partially filled with N2 (400 mTorr). For the deposit, the 3rd harmonic of a Nd:YAG laser (λ = 355 nm) was focused on the surface of the target. After deposition, annealing in NH3 was required to produce films with pure GaN hexagonal phase. The luminescence of the film was characterized by photo- and cathodoluminescence. In addition, the chemical and structural properties were analyzed by X-ray diffraction, scanning electron microscopy and energy dispersive spectroscopy.

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U2 - 10.1002/pssc.200778625

DO - 10.1002/pssc.200778625

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AN - SCOPUS:65449165749

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VL - 5

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EP - 1758

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 6

T2 - 7th International Conference of Nitride Semiconductors, ICNS-7

Y2 - 16 September 2007 through 21 September 2007

ER -

Eu³⁺ activated GaN thin films grown on sapphire by pulsed laser deposition

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