TY - GEN
T1 - Evaluating and improving SIMS method for measuring nitrogen in SiC
AU - Smith, Howard E.
AU - Eyink, Kurt G.
AU - Mitchel, William C.
AU - Wood, Mark C.
AU - Fanton, Mark A.
PY - 2006
Y1 - 2006
N2 - A multiple data point version of the industry standard, two data point raster-changing procedure is employed to measure low levels (< 1 × 1017 atoms/cm-3) of nitrogen (N) in silicon carbide (SiC) by SIMS (Secondary Ion Mass Spectrometry). A current-changing procedure is also employed. Together, these are used evaluate the assumptions of the standard method, to separate and measure the components of background signal, and to improve upon the precision and accuracy of the standard method. The risk of poor precision in the two-point method is demonstrated, as is the improvement provided by the multiple-point method. Results show that, in addition to the wellknown N memory background, adsorption background can contribute significantly to the N signal. In general, establishing the presence of adsorption gas in this way can be used to warn of the presence of ionization background, which is not measurable per se.
AB - A multiple data point version of the industry standard, two data point raster-changing procedure is employed to measure low levels (< 1 × 1017 atoms/cm-3) of nitrogen (N) in silicon carbide (SiC) by SIMS (Secondary Ion Mass Spectrometry). A current-changing procedure is also employed. Together, these are used evaluate the assumptions of the standard method, to separate and measure the components of background signal, and to improve upon the precision and accuracy of the standard method. The risk of poor precision in the two-point method is demonstrated, as is the improvement provided by the multiple-point method. Results show that, in addition to the wellknown N memory background, adsorption background can contribute significantly to the N signal. In general, establishing the presence of adsorption gas in this way can be used to warn of the presence of ionization background, which is not measurable per se.
UR - https://www.scopus.com/pages/publications/33846271626
UR - https://www.scopus.com/pages/publications/33846271626#tab=citedBy
U2 - 10.4028/0-87849-425-1.617
DO - 10.4028/0-87849-425-1.617
M3 - Conference contribution
AN - SCOPUS:33846271626
SN - 9780878494255
T3 - Materials Science Forum
SP - 617
EP - 620
BT - Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005
PB - Trans Tech Publications Ltd
T2 - International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
Y2 - 18 September 2005 through 23 September 2005
ER -