Evaluating the Robustness of Complementary Channel Ferroelectric FETs Against Total Ionizing Dose Towards Radiation-Tolerant Embedded Nonvolatile Memory

Zhouhang Jiang, Zixiang Guo, Xuyi Luo, Munazza Sayed, Zubair Faris, Halid Mulaosmanovic, Stefan Duenkel, Steven Soss, Sven Beyer, Xiao Gong, Santosh Kurinec, Vijaykrishnan Narayanan, Hussam Amrouch, En Xia Zhang, Daniel M. Fleetwood, Ronald D. Schrimpf, Kai Ni

Research output: Contribution to journalArticlepeer-review

Abstract

In this work, a thorough assessment of the robustness of complementary channel HfO2 ferroelectric FET (FeFET) against total ionizing dose (TID) radiation is conducted, with the goal of determining its suitability for use as high-performance and energy-efficient embedded nonvolatile memory (eNVM) for space applications. We demonstrate that: i) ferroelectric HfO2 thin film is robust against X-ray and proton irradiation; ii) FeFET exhibits a polarization state dependent radiation sensitivity where the high-<italic>V</italic>TH (HVT) state sees noticeable negative <italic>V</italic>TH shift and low-<italic>V</italic>TH (LVT) is immune to irradiation, irrespective of the channel type; iii) the state dependence is ascribed to the depolarization field in the HVT, which points toward the channel and facilitates the transport and trapping of radiation-generated holes close to the channel. In the future, radiation hardening techniques need to be considered.

Original languageEnglish (US)
Pages (from-to)1
Number of pages1
JournalIEEE Electron Device Letters
DOIs
StateAccepted/In press - 2023

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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