Evaluation of 1/f noise in prospective IR imaging thin films

Hitesh A. Basantani, David B. Saint John, Nikolas J. Podraza, Thomas N. Jackson, Mark W. Horn

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations


Vanadium oxide (VOx) and hydrogenated silicon germanium (Si xGe1-x) are the two predominant thin film material systems used as the active layer in resistive infrared imaging. Thin films of VOx used in microbolometers have a resistivity typically between 0.1 and 1 Ω-cm with a temperature coefficient of resistance, |TCR| between 1.4%/K to 2.4%/K, while SixGe1-x:H thin films have a resistivity between 200-4,000 Ω-cm with a |TCR| between 2.9%/K to 3.9%/K. Future devices may require higher TCR materials, however, higher TCR is loosely associated with higher resistivity and therefore also with high noise. This work compares 1/f noise of high resistivity VOxand Ge:H thin films having |TCR| < 3.6%/K. The high TCR thin films of VOxwere found to be amorphous while, depending on the deposition conditions, the Ge:H thin films were either amorphous or mixed phase of amorphous + nanocrystalline. Evaluation of these VOx and Ge:H thin films indicates a prospects for a superior process-property relation of 1/f noise in Ge:H thin films in comparison with thin films of VOx.

Original languageEnglish (US)
Title of host publicationInfrared Technology and Applications XL
ISBN (Print)9781628410075
StatePublished - Jan 1 2014
Event40th Conference on Infrared Technology and Applications - Baltimore, MD, United States
Duration: May 5 2014May 8 2014

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


Other40th Conference on Infrared Technology and Applications
Country/TerritoryUnited States
CityBaltimore, MD

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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