Evaluation of a 'Field Cage' for Electric Field Control in GaN-Based HEMTs That Extends the Scalability of Breakdown into the kV Regime

Brian D. Tierney, Sukwon Choi, Sandeepan Dasgupta, Jeramy R. Dickerson, Shahed Reza, Robert J. Kaplar, Albert G. Baca, Matthew J. Marinella

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

A distributed impedance 'field cage' structure is proposed and evaluated for electric field control in GaN-based, lateral high electron mobility transistors operating as kilovolt-range power devices. In this structure, a resistive voltage divider is used to control the electric field throughout the active region. The structure complements earlier proposals utilizing floating field plates that did not employ resistively connected elements. Transient results, not previously reported for field plate schemes using either floating or resistively connected field plates, are presented for ramps of dVds/dt = 100 V/ns. For both dc and transient results, the voltage between the gate and drain is laterally distributed, ensuring that the electric field profile between the gate and drain remains below the critical breakdown field as the source-to-drain voltage is increased. Our scheme indicates promise for achieving the breakdown voltage scalability to a few kilovolts.

Original languageEnglish (US)
Article number8011614
Pages (from-to)3740-3747
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume64
Issue number9
DOIs
StatePublished - Sep 2017

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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