Evaluation of new high temperature boron solid planar diffusion sources through p-n junction characterization

D. K. Hwang; R. E. Tressler; J. Ruzyllo

doi:10.1016/0040-6090(94)90157-0

Evaluation of new high temperature boron solid planar diffusion sources through p-n junction characterization

D. K. Hwang, R. E. Tressler, J. Ruzyllo

Materials Research Institute (MRI)

Research output: Contribution to journal › Article › peer-review

Abstract

The electrical characterization of p-n diodes fabricated using a newly developed high temperature (≥ 1100 °C) boron diffusion source consisting of a homogenous distribution of 9Al₂O₃·2B₂O₃ in a SiC foam substrate was carried out and results were compared with those obtained using commercial sources. Specifically, current-voltage and open circuit voltage decay measurements were performed. The results obtained indicate that devices fabricated from the new high temperature source perform satisfactorily, exhibiting characteristics that are comparable to the characteristics of devices fabricated from the established commercial high temperature boron diffusion sources.

Original language	English (US)
Pages (from-to)	16-19
Number of pages	4
Journal	Thin Solid Films
Volume	250
Issue number	1-2
DOIs	https://doi.org/10.1016/0040-6090(94)90157-0
State	Published - Oct 1 1994

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/0040-6090(94)90157-0

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title = "Evaluation of new high temperature boron solid planar diffusion sources through p-n junction characterization",

abstract = "The electrical characterization of p-n diodes fabricated using a newly developed high temperature (≥ 1100 °C) boron diffusion source consisting of a homogenous distribution of 9Al2O3·2B2O3 in a SiC foam substrate was carried out and results were compared with those obtained using commercial sources. Specifically, current-voltage and open circuit voltage decay measurements were performed. The results obtained indicate that devices fabricated from the new high temperature source perform satisfactorily, exhibiting characteristics that are comparable to the characteristics of devices fabricated from the established commercial high temperature boron diffusion sources.",

author = "Hwang, {D. K.} and Tressler, {R. E.} and J. Ruzyllo",

year = "1994",

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AU - Tressler, R. E.

AU - Ruzyllo, J.

PY - 1994/10/1

Y1 - 1994/10/1

N2 - The electrical characterization of p-n diodes fabricated using a newly developed high temperature (≥ 1100 °C) boron diffusion source consisting of a homogenous distribution of 9Al2O3·2B2O3 in a SiC foam substrate was carried out and results were compared with those obtained using commercial sources. Specifically, current-voltage and open circuit voltage decay measurements were performed. The results obtained indicate that devices fabricated from the new high temperature source perform satisfactorily, exhibiting characteristics that are comparable to the characteristics of devices fabricated from the established commercial high temperature boron diffusion sources.

AB - The electrical characterization of p-n diodes fabricated using a newly developed high temperature (≥ 1100 °C) boron diffusion source consisting of a homogenous distribution of 9Al2O3·2B2O3 in a SiC foam substrate was carried out and results were compared with those obtained using commercial sources. Specifically, current-voltage and open circuit voltage decay measurements were performed. The results obtained indicate that devices fabricated from the new high temperature source perform satisfactorily, exhibiting characteristics that are comparable to the characteristics of devices fabricated from the established commercial high temperature boron diffusion sources.

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JO - Thin Solid Films

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IS - 1-2

ER -

Evaluation of new high temperature boron solid planar diffusion sources through p-n junction characterization

Abstract

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