@inproceedings{ae018ece642f482fa33202b674e7f7ac,
title = "Evaluation of test methods employed for characterizing semi-insulating nature of monocrystaline SiC semiconductor materials",
abstract = "Silicon carbide (SiC) substrates offer an attractive template for the development of gallium nitride-based semiconductor materials device technologies for the advancement of high power solid-state microwave and millimeter wave circuits in the commercial and military defense markets. To ensure that the resistivity specifications of semi insulating (SI) are accurately determined and reported, the SEMI North American SiC Task Force has completed a first round robin test activity which includes evaluating contact and non-contact test methods employed to report high resistivity values for SiC semiconductor materials. Results from the round robin are aligned with customer requirements for the development of a semi-insulating specification and test method for SiC substrates.",
author = "MacMillan, {M. F.} and W. Mitchel and J. Blevins and G. Landis and J. Daniel and Sandhu, {R. S.} and G. Chung and M. Spaulding and Zoes, {T. F.} and E. Emorhokpor and C. Basceri and J. Jenny and E. Berkman and Wolfgang Jantz and W. Eichhorn and A. Blew and Oliver, {J. D.} and Mark Fanton and Tim Bogart and Bill Eversson",
year = "2008",
language = "English (US)",
isbn = "1893580113",
series = "2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008",
booktitle = "2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008",
note = "23rd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008 ; Conference date: 14-04-2008 Through 17-04-2008",
}