Even-Odd Layer-Dependent Anomalous Hall Effect in Topological Magnet MnBi2Te4 Thin Films

Yi Fan Zhao, Ling Jie Zhou, Fei Wang, Guang Wang, Tiancheng Song, Dmitry Ovchinnikov, Hemian Yi, Ruobing Mei, Ke Wang, Moses H.W. Chan, Chao Xing Liu, Xiaodong Xu, Cui Zu Chang

Research output: Contribution to journalArticlepeer-review

41 Scopus citations


Recently, MnBi2Te4 has been demonstrated to be an intrinsic magnetic topological insulator and the quantum anomalous Hall (QAH) effect was observed in exfoliated MnBi2Te4 flakes. Here, we used molecular beam epitaxy (MBE) to grow MnBi2Te4 films with thickness down to 1 septuple layer (SL) and performed thickness-dependent transport measurements. We observed a nonsquare hysteresis loop in the antiferromagnetic state for films with thickness greater than 2 SL. The hysteresis loop can be separated into two AH components. We demonstrated that one AH component with the larger coercive field is from the dominant MnBi2Te4 phase, whereas the other AH component with the smaller coercive field is from the minor Mn-doped Bi2Te3 phase. The extracted AH component of the MnBi2Te4 phase shows a clear even-odd layer-dependent behavior. Our studies reveal insights on how to optimize the MBE growth conditions to improve the quality of MnBi2Te4 films.

Original languageEnglish (US)
Pages (from-to)7691-7698
Number of pages8
JournalNano letters
Issue number18
StatePublished - Sep 22 2021

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanical Engineering


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