@inproceedings{0cd97d9a0c0b49bd8f2a0d23a8cbaa48,
title = "Evidence for P b center-hydrogen complexes after subjecting PMOS devices to NBTI stress - A combined DCIV/SDR study",
abstract = "We study deep level defects at the Si/SiO 2 interface of 30nm and 5nm SiO 2 PMOS devices after negative bias temperature stress (NBTS). Electrical characterization using the direct-current current-voltage (DCIV) technique reveals two defects with different energy levels, recovery and degradation dynamics. To investigate their micro-physical nature, we perform spin dependent recombination (SDR). Besides conventional P b centers we also find evidence for P b center-hydrogen complexes.",
author = "Thomas Aichinger and Lenahan, {Patrick M.} and Tibor Grasser and Gregor Pobegen and Michael Nelhiebel",
year = "2012",
doi = "10.1109/IRPS.2012.6241932",
language = "English (US)",
isbn = "9781457716799",
series = "IEEE International Reliability Physics Symposium Proceedings",
pages = "XT.2.1--XT.2.6",
booktitle = "2012 IEEE International Reliability Physics Symposium, IRPS 2012",
note = "2012 IEEE International Reliability Physics Symposium, IRPS 2012 ; Conference date: 15-04-2012 Through 19-04-2012",
}