@inproceedings{245c1f2507bd4083bd00c7b4054ccfc2,
title = "EVIDENCE FOR POLYCRYSTALLINE Si SURFACE LAYER FORMATION BY ARGON IMPLANTATION AND ITS PASSIVATION BY ATOMIC HYDROGEN.",
abstract = "Al/p-Si Schottky barriers formed on wafers implanted with 10-20 keV Ar exhibit low-temperature electrical properties characteristic of grain boundary transport. Subsequent low-energy (0. 4 keV), high fluence (approximately 10E18 cm** minus **2) H implant is found to passivate the grain boundaries of the Ar implant-induced microcrystals. Extreme high Al/p-Si Schottky barrier heights are obtained following the dual implants, and deep level transient spectroscopy (DLTS) measurements reveal that H also alters the properties of traps introduced by the Ar implant, thus improving the diode characteristics.",
author = "Chien, {H. C.} and S. Ashok and Slowik, {J. H.}",
year = "1987",
language = "English (US)",
isbn = "0931837421",
series = "Materials Research Society Symposia Proceedings",
publisher = "Materials Research Soc",
pages = "203--207",
editor = "R.E. Howard and E.L. Hu and S. Namba and S. Pang",
booktitle = "Materials Research Society Symposia Proceedings",
}