Evidence for the formation of polycrystalline silicon by argon implantation and its passivation by atomic hydrogen

S. A. Ringel; H. C. Chien; S. Ashok

doi:10.1063/1.97581

Evidence for the formation of polycrystalline silicon by argon implantation and its passivation by atomic hydrogen

S. A. Ringel, H. C. Chien, S. Ashok

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Abstract

Evidence is presented through electrical measurements for the presence of microcrystallites in the surface damage layer resulting from the implantation of 20 keV Ar at a moderate dose (10¹³ cm^- ²). Low-energy (0.4 keV) atomic hydrogen is found to passivate the polycrystalline grain boundaries resulting from the argon implant. Extremely high Schottky barrier heights on p-type Si, up to 0.88 eV, are also found to result from the implantation of both argon and atomic hydrogen.

Original language	English (US)
Pages (from-to)	728-730
Number of pages	3
Journal	Applied Physics Letters
Volume	49
Issue number	12
DOIs	https://doi.org/10.1063/1.97581
State	Published - 1986

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.97581

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title = "Evidence for the formation of polycrystalline silicon by argon implantation and its passivation by atomic hydrogen",

abstract = "Evidence is presented through electrical measurements for the presence of microcrystallites in the surface damage layer resulting from the implantation of 20 keV Ar at a moderate dose (1013 cm- 2). Low-energy (0.4 keV) atomic hydrogen is found to passivate the polycrystalline grain boundaries resulting from the argon implant. Extremely high Schottky barrier heights on p-type Si, up to 0.88 eV, are also found to result from the implantation of both argon and atomic hydrogen.",

author = "Ringel, {S. A.} and Chien, {H. C.} and S. Ashok",

year = "1986",

doi = "10.1063/1.97581",

language = "English (US)",

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pages = "728--730",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Publising LLC",

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T1 - Evidence for the formation of polycrystalline silicon by argon implantation and its passivation by atomic hydrogen

AU - Ringel, S. A.

AU - Chien, H. C.

AU - Ashok, S.

PY - 1986

Y1 - 1986

N2 - Evidence is presented through electrical measurements for the presence of microcrystallites in the surface damage layer resulting from the implantation of 20 keV Ar at a moderate dose (1013 cm- 2). Low-energy (0.4 keV) atomic hydrogen is found to passivate the polycrystalline grain boundaries resulting from the argon implant. Extremely high Schottky barrier heights on p-type Si, up to 0.88 eV, are also found to result from the implantation of both argon and atomic hydrogen.

AB - Evidence is presented through electrical measurements for the presence of microcrystallites in the surface damage layer resulting from the implantation of 20 keV Ar at a moderate dose (1013 cm- 2). Low-energy (0.4 keV) atomic hydrogen is found to passivate the polycrystalline grain boundaries resulting from the argon implant. Extremely high Schottky barrier heights on p-type Si, up to 0.88 eV, are also found to result from the implantation of both argon and atomic hydrogen.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Evidence for the formation of polycrystalline silicon by argon implantation and its passivation by atomic hydrogen

Abstract

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