Evidence for the formation of polycrystalline silicon by argon implantation and its passivation by atomic hydrogen

S. A. Ringel; H. C. Chien; S. Ashok

doi:10.1063/1.97581

Evidence for the formation of polycrystalline silicon by argon implantation and its passivation by atomic hydrogen

S. A. Ringel
, H. C. Chien
, S. Ashok

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Evidence is presented through electrical measurements for the presence of microcrystallites in the surface damage layer resulting from the implantation of 20 keV Ar at a moderate dose (10¹³ cm^- ²). Low-energy (0.4 keV) atomic hydrogen is found to passivate the polycrystalline grain boundaries resulting from the argon implant. Extremely high Schottky barrier heights on p-type Si, up to 0.88 eV, are also found to result from the implantation of both argon and atomic hydrogen.

Original language	English (US)
Pages (from-to)	728-730
Number of pages	3
Journal	Applied Physics Letters
Volume	49
Issue number	12
DOIs	https://doi.org/10.1063/1.97581
State	Published - 1986

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.97581

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title = "Evidence for the formation of polycrystalline silicon by argon implantation and its passivation by atomic hydrogen",

abstract = "Evidence is presented through electrical measurements for the presence of microcrystallites in the surface damage layer resulting from the implantation of 20 keV Ar at a moderate dose (1013 cm- 2). Low-energy (0.4 keV) atomic hydrogen is found to passivate the polycrystalline grain boundaries resulting from the argon implant. Extremely high Schottky barrier heights on p-type Si, up to 0.88 eV, are also found to result from the implantation of both argon and atomic hydrogen.",

author = "Ringel, \{S. A.\} and Chien, \{H. C.\} and S. Ashok",

year = "1986",

doi = "10.1063/1.97581",

language = "English (US)",

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pages = "728--730",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Evidence for the formation of polycrystalline silicon by argon implantation and its passivation by atomic hydrogen

AU - Ringel, S. A.

AU - Chien, H. C.

AU - Ashok, S.

PY - 1986

Y1 - 1986

N2 - Evidence is presented through electrical measurements for the presence of microcrystallites in the surface damage layer resulting from the implantation of 20 keV Ar at a moderate dose (1013 cm- 2). Low-energy (0.4 keV) atomic hydrogen is found to passivate the polycrystalline grain boundaries resulting from the argon implant. Extremely high Schottky barrier heights on p-type Si, up to 0.88 eV, are also found to result from the implantation of both argon and atomic hydrogen.

AB - Evidence is presented through electrical measurements for the presence of microcrystallites in the surface damage layer resulting from the implantation of 20 keV Ar at a moderate dose (1013 cm- 2). Low-energy (0.4 keV) atomic hydrogen is found to passivate the polycrystalline grain boundaries resulting from the argon implant. Extremely high Schottky barrier heights on p-type Si, up to 0.88 eV, are also found to result from the implantation of both argon and atomic hydrogen.

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U2 - 10.1063/1.97581

DO - 10.1063/1.97581

M3 - Article

AN - SCOPUS:36549103850

SN - 0003-6951

VL - 49

SP - 728

EP - 730

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Evidence for the formation of polycrystalline silicon by argon implantation and its passivation by atomic hydrogen

Abstract

All Science Journal Classification (ASJC) codes

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