Evidence for topological surface states in epitaxial Bi2Se3 thin film grown by pulsed laser deposition through magneto-transport measurements

Y. F. Lee; S. Punugupati; F. Wu; Z. Jin; J. Narayan; J. Schwartz

doi:10.1016/j.cossms.2014.07.001

Evidence for topological surface states in epitaxial Bi₂Se₃ thin film grown by pulsed laser deposition through magneto-transport measurements

Y. F. Lee, S. Punugupati, F. Wu, Z. Jin, J. Narayan, J. Schwartz

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35 Scopus citations

Abstract

We report epitaxial growth via domain matching epitaxy of Bi₂Se₃ thin films on Al₂O₃ (0001) substrates with over 13% lattice misfit and critical thickness less than one monolayer. X-ray and electron diffraction patterns confirm that the layers are epitaxial with (0001) Bi₂Se₃ ∥ (0001) Al₂O₃ and [21 10] Bi₂Se₃ ∥ [2110] Al₂O₃ (or) [2110] Bi₂Se₃ par; [1120] Al₂O₃ without the presence of an interfacial pseudomorphic layer. X-ray photoemission spectroscopy reveals that the films are Se-deficient, in agreement with electrical transport data showing n-type carriers and metallic behavior. Magneto-resistance (MR) measurements show a cusp feature corresponding to weak antilocalization and linear-MR shows a non-saturating trend up to 9 T. These results suggest topological surface states in PLD-grown Bi₂Se₃ films.

Original language	English (US)
Pages (from-to)	279-285
Number of pages	7
Journal	Current Opinion in Solid State and Materials Science
Volume	18
Issue number	5
DOIs	https://doi.org/10.1016/j.cossms.2014.07.001
State	Published - 2014

All Science Journal Classification (ASJC) codes

General Materials Science

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10.1016/j.cossms.2014.07.001

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@article{74b72f8949d34b47852a50608f5b7a36,

title = "Evidence for topological surface states in epitaxial Bi2Se3 thin film grown by pulsed laser deposition through magneto-transport measurements",

abstract = "We report epitaxial growth via domain matching epitaxy of Bi2Se3 thin films on Al2O3 (0001) substrates with over 13% lattice misfit and critical thickness less than one monolayer. X-ray and electron diffraction patterns confirm that the layers are epitaxial with (0001) Bi2Se3 ∥ (0001) Al2O3 and [21 10] Bi2Se3 ∥ [2110] Al2O3 (or) [2110] Bi2Se3 par; [1120] Al2O3 without the presence of an interfacial pseudomorphic layer. X-ray photoemission spectroscopy reveals that the films are Se-deficient, in agreement with electrical transport data showing n-type carriers and metallic behavior. Magneto-resistance (MR) measurements show a cusp feature corresponding to weak antilocalization and linear-MR shows a non-saturating trend up to 9 T. These results suggest topological surface states in PLD-grown Bi2Se3 films.",

author = "Lee, {Y. F.} and S. Punugupati and F. Wu and Z. Jin and J. Narayan and J. Schwartz",

year = "2014",

doi = "10.1016/j.cossms.2014.07.001",

language = "English (US)",

volume = "18",

pages = "279--285",

journal = "Current Opinion in Solid State and Materials Science",

issn = "1359-0286",

publisher = "Elsevier Ltd",

number = "5",

}

TY - JOUR

T1 - Evidence for topological surface states in epitaxial Bi2Se3 thin film grown by pulsed laser deposition through magneto-transport measurements

AU - Lee, Y. F.

AU - Punugupati, S.

AU - Wu, F.

AU - Jin, Z.

AU - Narayan, J.

AU - Schwartz, J.

PY - 2014

Y1 - 2014

N2 - We report epitaxial growth via domain matching epitaxy of Bi2Se3 thin films on Al2O3 (0001) substrates with over 13% lattice misfit and critical thickness less than one monolayer. X-ray and electron diffraction patterns confirm that the layers are epitaxial with (0001) Bi2Se3 ∥ (0001) Al2O3 and [21 10] Bi2Se3 ∥ [2110] Al2O3 (or) [2110] Bi2Se3 par; [1120] Al2O3 without the presence of an interfacial pseudomorphic layer. X-ray photoemission spectroscopy reveals that the films are Se-deficient, in agreement with electrical transport data showing n-type carriers and metallic behavior. Magneto-resistance (MR) measurements show a cusp feature corresponding to weak antilocalization and linear-MR shows a non-saturating trend up to 9 T. These results suggest topological surface states in PLD-grown Bi2Se3 films.

AB - We report epitaxial growth via domain matching epitaxy of Bi2Se3 thin films on Al2O3 (0001) substrates with over 13% lattice misfit and critical thickness less than one monolayer. X-ray and electron diffraction patterns confirm that the layers are epitaxial with (0001) Bi2Se3 ∥ (0001) Al2O3 and [21 10] Bi2Se3 ∥ [2110] Al2O3 (or) [2110] Bi2Se3 par; [1120] Al2O3 without the presence of an interfacial pseudomorphic layer. X-ray photoemission spectroscopy reveals that the films are Se-deficient, in agreement with electrical transport data showing n-type carriers and metallic behavior. Magneto-resistance (MR) measurements show a cusp feature corresponding to weak antilocalization and linear-MR shows a non-saturating trend up to 9 T. These results suggest topological surface states in PLD-grown Bi2Se3 films.

UR - http://www.scopus.com/inward/record.url?scp=85027933634&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85027933634&partnerID=8YFLogxK

U2 - 10.1016/j.cossms.2014.07.001

DO - 10.1016/j.cossms.2014.07.001

M3 - Article

AN - SCOPUS:85027933634

SN - 1359-0286

VL - 18

SP - 279

EP - 285

JO - Current Opinion in Solid State and Materials Science

JF - Current Opinion in Solid State and Materials Science

IS - 5

ER -

Evidence for topological surface states in epitaxial Bi₂Se₃ thin film grown by pulsed laser deposition through magneto-transport measurements

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