Evidence of Space-Charge-Limited Current in Amorphous Silicon Schottky Diodes

S. Ashok; A. Lester; S. J. Fonash

doi:10.1109/EDL.1980.25288

Evidence of Space-Charge-Limited Current in Amorphous Silicon Schottky Diodes

S. Ashok, A. Lester, S. J. Fonash

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Abstract

Palladium/amorphous silicon (a-SiHx) Schottky barrier diodes have been found to exhibit superlinear dark forward current-voltage (I-V) characteristics over the temperature range 30 to 130°C. The results are consistent with expected behavior for space-charge-limited current in the presence of distributed traps. The trap parameters are deduced from I-V data.

Original language	English (US)
Pages (from-to)	200-202
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	1
Issue number	10
DOIs	https://doi.org/10.1109/EDL.1980.25288
State	Published - Oct 1980

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/EDL.1980.25288

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title = "Evidence of Space-Charge-Limited Current in Amorphous Silicon Schottky Diodes",

abstract = "Palladium/amorphous silicon (a-SiHx) Schottky barrier diodes have been found to exhibit superlinear dark forward current-voltage (I-V) characteristics over the temperature range 30 to 130°C. The results are consistent with expected behavior for space-charge-limited current in the presence of distributed traps. The trap parameters are deduced from I-V data.",

author = "S. Ashok and A. Lester and Fonash, \{S. J.\}",

year = "1980",

month = oct,

doi = "10.1109/EDL.1980.25288",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Ashok, S.

AU - Lester, A.

AU - Fonash, S. J.

PY - 1980/10

Y1 - 1980/10

N2 - Palladium/amorphous silicon (a-SiHx) Schottky barrier diodes have been found to exhibit superlinear dark forward current-voltage (I-V) characteristics over the temperature range 30 to 130°C. The results are consistent with expected behavior for space-charge-limited current in the presence of distributed traps. The trap parameters are deduced from I-V data.

AB - Palladium/amorphous silicon (a-SiHx) Schottky barrier diodes have been found to exhibit superlinear dark forward current-voltage (I-V) characteristics over the temperature range 30 to 130°C. The results are consistent with expected behavior for space-charge-limited current in the presence of distributed traps. The trap parameters are deduced from I-V data.

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DO - 10.1109/EDL.1980.25288

M3 - Article

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VL - 1

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 10

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Evidence of Space-Charge-Limited Current in Amorphous Silicon Schottky Diodes

Abstract

All Science Journal Classification (ASJC) codes

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