Evolution of deep defect centers in semi-insulating 4H-SiC substrates under high-temperature annealing

S. I. Maximenko; J. A. Freitas; N. Y. Garces; E. R. Glaser; M. A. Fanton

doi:10.1007/s11664-008-0607-0

Evolution of deep defect centers in semi-insulating 4H-SiC substrates under high-temperature annealing

S. I. Maximenko, J. A. Freitas, N. Y. Garces, E. R. Glaser, M. A. Fanton

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The influence of postgrowth high-temperature anneals between 1400°C and 2400°C on the behavior of the D ₁ center in semi-insulating 4H-SiC was studied by photoluminescence. The optical signature of D ₁ was observed up to 2400°C with intensity maxima at 1700°C and 2200°C. It was also found that changes in the postannealing cooling rate drastically influence the behavior of the D ₁ center and the concentrations of the V _C, V _Si, V _C-V _Si, and V _C-C _Si lattice defects observed from electron paramagnetic resonance experiments. The change in intensity of the D ₁ defect has some correlation with the intensity change of the V _C-V _Si pair defect at temperatures above 1900°C. In addition, infrared photoluminescence spectroscopy studies showed that changes in the intensity of the D ₁ defect at 2100°C to 2400°C annealing temperatures and variable cool-down rates have close correlation with intensity changes of the UD2 defect.

Original language	English (US)
Pages (from-to)	551-556
Number of pages	6
Journal	Journal of Electronic Materials
Volume	38
Issue number	4
DOIs	https://doi.org/10.1007/s11664-008-0607-0
State	Published - Apr 2009

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Evolution of deep defect centers in semi-insulating 4H-SiC substrates under high-temperature annealing",

abstract = "The influence of postgrowth high-temperature anneals between 1400°C and 2400°C on the behavior of the D 1 center in semi-insulating 4H-SiC was studied by photoluminescence. The optical signature of D 1 was observed up to 2400°C with intensity maxima at 1700°C and 2200°C. It was also found that changes in the postannealing cooling rate drastically influence the behavior of the D 1 center and the concentrations of the V C, V Si, V C-V Si, and V C-C Si lattice defects observed from electron paramagnetic resonance experiments. The change in intensity of the D 1 defect has some correlation with the intensity change of the V C-V Si pair defect at temperatures above 1900°C. In addition, infrared photoluminescence spectroscopy studies showed that changes in the intensity of the D 1 defect at 2100°C to 2400°C annealing temperatures and variable cool-down rates have close correlation with intensity changes of the UD2 defect.",

author = "Maximenko, {S. I.} and Freitas, {J. A.} and Garces, {N. Y.} and Glaser, {E. R.} and Fanton, {M. A.}",

note = "Funding Information: S.I. Maximenko and N.Y. Garces would like to acknowledge the National Research Council for financial support.",

year = "2009",

month = apr,

doi = "10.1007/s11664-008-0607-0",

language = "English (US)",

volume = "38",

pages = "551--556",

journal = "Journal of Electronic Materials",

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T1 - Evolution of deep defect centers in semi-insulating 4H-SiC substrates under high-temperature annealing

AU - Maximenko, S. I.

AU - Freitas, J. A.

AU - Garces, N. Y.

AU - Glaser, E. R.

AU - Fanton, M. A.

N1 - Funding Information: S.I. Maximenko and N.Y. Garces would like to acknowledge the National Research Council for financial support.

PY - 2009/4

Y1 - 2009/4

N2 - The influence of postgrowth high-temperature anneals between 1400°C and 2400°C on the behavior of the D 1 center in semi-insulating 4H-SiC was studied by photoluminescence. The optical signature of D 1 was observed up to 2400°C with intensity maxima at 1700°C and 2200°C. It was also found that changes in the postannealing cooling rate drastically influence the behavior of the D 1 center and the concentrations of the V C, V Si, V C-V Si, and V C-C Si lattice defects observed from electron paramagnetic resonance experiments. The change in intensity of the D 1 defect has some correlation with the intensity change of the V C-V Si pair defect at temperatures above 1900°C. In addition, infrared photoluminescence spectroscopy studies showed that changes in the intensity of the D 1 defect at 2100°C to 2400°C annealing temperatures and variable cool-down rates have close correlation with intensity changes of the UD2 defect.

AB - The influence of postgrowth high-temperature anneals between 1400°C and 2400°C on the behavior of the D 1 center in semi-insulating 4H-SiC was studied by photoluminescence. The optical signature of D 1 was observed up to 2400°C with intensity maxima at 1700°C and 2200°C. It was also found that changes in the postannealing cooling rate drastically influence the behavior of the D 1 center and the concentrations of the V C, V Si, V C-V Si, and V C-C Si lattice defects observed from electron paramagnetic resonance experiments. The change in intensity of the D 1 defect has some correlation with the intensity change of the V C-V Si pair defect at temperatures above 1900°C. In addition, infrared photoluminescence spectroscopy studies showed that changes in the intensity of the D 1 defect at 2100°C to 2400°C annealing temperatures and variable cool-down rates have close correlation with intensity changes of the UD2 defect.

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Evolution of deep defect centers in semi-insulating 4H-SiC substrates under high-temperature annealing

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