Evolution of deep defect centers in semi-insulating 4H-SiC substrates under high-temperature annealing

Keyphrases

• 1-center 100%
• 4H-SiC Substrates 100%
• Annealing Temperature 50%
• C-Si 50%
• Cool-down 50%
• Cooling Rate 50%
• Deep Level Defects 100%
• Defect Centers 100%
• Electron Paramagnetic Resonance 50%
• High Temperature Anneal 50%
• High-temperature Annealing 100%
• Intensity Change 100%
• Lattice Defects 50%
• Optical Signature 50%
• Photoluminescence 50%
• Photoluminescence Spectroscopy 50%
• Post-annealing 50%
• Post-growth 50%
• Resonance Experiment 50%
• Semi-insulating SiC 100%
• Si Lattice 50%
• Spectroscopy Studies 50%
• V(V) 50%

Material Science

• Annealing 100%
• Crystal Defect 50%
• Photoluminescence 100%

Engineering

• Annealing Temperature 20%
• Cooling Rate 20%
• Deep Defect 100%
• Defects 100%