Evolution of D1-defect center in 4H-SiC during high temperature annealing

S. I. Maximenko, J. A. Freitas, N. Y. Garces, E. R. Glaser, M. A. Fanton

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Scopus citations

    Abstract

    The behavior of the D1 center in semi-insulating 4H-SiC substrates revealed by low-temperature photoluminescence was investigated after post-growth high temperature anneals between 1400 and 2400°C. The influence of different post-anneal cooling rates was also studied. The optical signature of D1 was observed up to 2400°C with intensity maxima at 1700 and 2200°C. We propose that the peak at 1700°C can be related to the formation and subsequent dissociation of Sic native defects. It was found that changes in the post-annealing cooling rate drastically influence the behavior of the D1 center and the concentrations of the VC, V Si, VC-VSi and VC-CSi lattice defects.

    Original languageEnglish (US)
    Title of host publicationSilicon Carbide and Related Materials 2007
    EditorsAkira Suzuki, Hajime Okumura, Kenji Fukuda, Shin-ichi Nishizawa, Tsunenobu Kimoto, Takashi Fuyuki
    PublisherTrans Tech Publications Ltd
    Pages429-432
    Number of pages4
    ISBN (Print)9780878493579
    DOIs
    StatePublished - Jan 1 2009
    Event12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, Japan
    Duration: Oct 14 2007Oct 19 2007

    Publication series

    NameMaterials Science Forum
    Volume600-603
    ISSN (Print)0255-5476
    ISSN (Electronic)1662-9752

    Conference

    Conference12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007
    Country/TerritoryJapan
    CityOtsu
    Period10/14/0710/19/07

    All Science Journal Classification (ASJC) codes

    • General Materials Science
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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