@inproceedings{9340df9b9bd942e0864fd385c0e16f99,
title = "Evolution of D1-defect center in 4H-SiC during high temperature annealing",
abstract = "The behavior of the D1 center in semi-insulating 4H-SiC substrates revealed by low-temperature photoluminescence was investigated after post-growth high temperature anneals between 1400 and 2400°C. The influence of different post-anneal cooling rates was also studied. The optical signature of D1 was observed up to 2400°C with intensity maxima at 1700 and 2200°C. We propose that the peak at 1700°C can be related to the formation and subsequent dissociation of Sic native defects. It was found that changes in the post-annealing cooling rate drastically influence the behavior of the D1 center and the concentrations of the VC, V Si, VC-VSi and VC-CSi lattice defects.",
author = "Maximenko, {S. I.} and Freitas, {J. A.} and Garces, {N. Y.} and Glaser, {E. R.} and Fanton, {M. A.}",
year = "2009",
month = jan,
day = "1",
doi = "10.4028/3-908453-11-9.429",
language = "English (US)",
isbn = "9780878493579",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "429--432",
editor = "Akira Suzuki and Hajime Okumura and Kenji Fukuda and Shin-ichi Nishizawa and Tsunenobu Kimoto and Takashi Fuyuki",
booktitle = "Silicon Carbide and Related Materials 2007",
note = "12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 ; Conference date: 14-10-2007 Through 19-10-2007",
}