Evolution of D1-defect center in 4H-SiC during high temperature annealing

S. I. Maximenko, J. A. Freitas, N. Y. Garces, E. R. Glaser, M. A. Fanton

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    2 Scopus citations

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    Keyphrases

    Material Science

    Engineering

    Physics