Evolution of threading dislocations in GaN films grown on (111) Si substrates with various buffer layers

X. Weng; J. Acord; A. Jain; S. Raghavan; J. Redwing; E. Dickey

doi:10.1017/S1431927606065524

Evolution of threading dislocations in GaN films grown on (111) Si substrates with various buffer layers

X. Weng, J. Acord, A. Jain, S. Raghavan, J. Redwing, E. Dickey

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	906-907
Number of pages	2
Journal	Microscopy and Microanalysis
Volume	12
Issue number	SUPPL. 2
DOIs	https://doi.org/10.1017/S1431927606065524
State	Published - Aug 2006

All Science Journal Classification (ASJC) codes

Instrumentation

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title = "Evolution of threading dislocations in GaN films grown on (111) Si substrates with various buffer layers",

author = "X. Weng and J. Acord and A. Jain and S. Raghavan and J. Redwing and E. Dickey",

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AU - Jain, A.

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AU - Redwing, J.

AU - Dickey, E.

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ER -

Evolution of threading dislocations in GaN films grown on (111) Si substrates with various buffer layers

All Science Journal Classification (ASJC) codes

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