Evolution of threading dislocations in GaN films grown on (111) Si substrates with various buffer layers

X. Weng; J. Acord; A. Jain; S. Raghavan; J. Redwing; E. Dickey

doi:10.1017/S1431927606065524

Evolution of threading dislocations in GaN films grown on (111) Si substrates with various buffer layers

X. Weng
, J. Acord
, A. Jain
, S. Raghavan
, J. Redwing
, E. Dickey

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	906-907
Number of pages	2
Journal	Microscopy and Microanalysis
Volume	12
Issue number	SUPPL. 2
DOIs	https://doi.org/10.1017/S1431927606065524
State	Published - Aug 2006

All Science Journal Classification (ASJC) codes

Instrumentation

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10.1017/S1431927606065524

Cite this

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title = "Evolution of threading dislocations in GaN films grown on (111) Si substrates with various buffer layers",

author = "X. Weng and J. Acord and A. Jain and S. Raghavan and J. Redwing and E. Dickey",

year = "2006",

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language = "English (US)",

volume = "12",

pages = "906--907",

journal = "Microscopy and Microanalysis",

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T1 - Evolution of threading dislocations in GaN films grown on (111) Si substrates with various buffer layers

AU - Weng, X.

AU - Acord, J.

AU - Jain, A.

AU - Raghavan, S.

AU - Redwing, J.

AU - Dickey, E.

PY - 2006/8

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DO - 10.1017/S1431927606065524

M3 - Article

AN - SCOPUS:33750851680

SN - 1431-9276

VL - 12

SP - 906

EP - 907

JO - Microscopy and Microanalysis

JF - Microscopy and Microanalysis

IS - SUPPL. 2

ER -

Evolution of threading dislocations in GaN films grown on (111) Si substrates with various buffer layers

All Science Journal Classification (ASJC) codes

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