Excellent resistive switching characteristics of Cu doped ZrO2 and its 64 bit cross-point integration

Ming Liu; Weihua Guan; Shibing Long; Qi Liu; Wei Wang

doi:10.1109/ICSICT.2008.4734692

Excellent resistive switching characteristics of Cu doped ZrO₂ and its 64 bit cross-point integration

Ming Liu, Weihua Guan, Shibing Long, Qi Liu, Wei Wang

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

Excellent nonpolar resistive switching behavior is reported in the Cu doped ZrO₂ memory devices with the sandwiched structure of Cu/ZrO ₂:Cu/Pt. The ratio between the high and low resistance is in the order of 10⁶. Set and Reset operation in voltage pulse mode can be as fast as 50 ns and 100 ns, respectively. Multilevel storage is considered feasible due to the dependence of ON-state resistance on Set compliance current. The switching mechanism is demonstrated to be related with the formation and rupture of Cu conductive bridge. Based on this working cell, 64 bit cross-point array is fabricated and tested.

Original language	English (US)
Title of host publication	ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
Pages	905-908
Number of pages	4
DOIs	https://doi.org/10.1109/ICSICT.2008.4734692
State	Published - 2008
Event	2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China Duration: Oct 20 2008 → Oct 23 2008

Publication series

Name	International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Other

Other	2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
Country/Territory	China
City	Beijing
Period	10/20/08 → 10/23/08

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Condensed Matter Physics
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ICSICT.2008.4734692

Cite this

Liu, M., Guan, W., Long, S., Liu, Q., & Wang, W. (2008). Excellent resistive switching characteristics of Cu doped ZrO₂ and its 64 bit cross-point integration. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings (pp. 905-908). Article 4734692 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). https://doi.org/10.1109/ICSICT.2008.4734692

Liu, Ming ; Guan, Weihua ; Long, Shibing et al. / Excellent resistive switching characteristics of Cu doped ZrO₂ and its 64 bit cross-point integration. ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. pp. 905-908 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

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title = "Excellent resistive switching characteristics of Cu doped ZrO2 and its 64 bit cross-point integration",

abstract = "Excellent nonpolar resistive switching behavior is reported in the Cu doped ZrO2 memory devices with the sandwiched structure of Cu/ZrO 2:Cu/Pt. The ratio between the high and low resistance is in the order of 106. Set and Reset operation in voltage pulse mode can be as fast as 50 ns and 100 ns, respectively. Multilevel storage is considered feasible due to the dependence of ON-state resistance on Set compliance current. The switching mechanism is demonstrated to be related with the formation and rupture of Cu conductive bridge. Based on this working cell, 64 bit cross-point array is fabricated and tested.",

author = "Ming Liu and Weihua Guan and Shibing Long and Qi Liu and Wei Wang",

year = "2008",

doi = "10.1109/ICSICT.2008.4734692",

language = "English (US)",

isbn = "9781424421855",

series = "International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT",

pages = "905--908",

booktitle = "ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings",

note = "2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 ; Conference date: 20-10-2008 Through 23-10-2008",

}

Liu, M, Guan, W, Long, S, Liu, Q & Wang, W 2008, Excellent resistive switching characteristics of Cu doped ZrO₂ and its 64 bit cross-point integration. in ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings., 4734692, International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, pp. 905-908, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008, Beijing, China, 10/20/08. https://doi.org/10.1109/ICSICT.2008.4734692

Excellent resistive switching characteristics of Cu doped ZrO₂ and its 64 bit cross-point integration. / Liu, Ming; Guan, Weihua; Long, Shibing et al.
ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. p. 905-908 4734692 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - Excellent nonpolar resistive switching behavior is reported in the Cu doped ZrO2 memory devices with the sandwiched structure of Cu/ZrO 2:Cu/Pt. The ratio between the high and low resistance is in the order of 106. Set and Reset operation in voltage pulse mode can be as fast as 50 ns and 100 ns, respectively. Multilevel storage is considered feasible due to the dependence of ON-state resistance on Set compliance current. The switching mechanism is demonstrated to be related with the formation and rupture of Cu conductive bridge. Based on this working cell, 64 bit cross-point array is fabricated and tested.

AB - Excellent nonpolar resistive switching behavior is reported in the Cu doped ZrO2 memory devices with the sandwiched structure of Cu/ZrO 2:Cu/Pt. The ratio between the high and low resistance is in the order of 106. Set and Reset operation in voltage pulse mode can be as fast as 50 ns and 100 ns, respectively. Multilevel storage is considered feasible due to the dependence of ON-state resistance on Set compliance current. The switching mechanism is demonstrated to be related with the formation and rupture of Cu conductive bridge. Based on this working cell, 64 bit cross-point array is fabricated and tested.

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Liu M, Guan W, Long S, Liu Q, Wang W. Excellent resistive switching characteristics of Cu doped ZrO₂ and its 64 bit cross-point integration. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. p. 905-908. 4734692. (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). doi: 10.1109/ICSICT.2008.4734692