@article{29f626ae73054f66a7bf8b9462cc8a5b,
title = "Exceptional high temperature retention in Al0.93B0.07N films",
abstract = "This paper reports the retention behavior for Al0.93B0.07N thin films, a member of the novel family of wurtzite ferroelectrics. Our experiments suggest that bipolar cycling of metal (Pt/W)/Al0.93B0.07N/W/Al2O3 film stacks first induced wake-up and then a region of constant switchable polarization. The films showed excellent retention of the stored polarization state. As expected, data retention was slightly inferior in the opposite state (OS) measurements. However, it is noted that even after 3.6 × 106 s (1000 h) at 200 °C, the OS signal margin still exceeded 200 μC/cm2. The predicted OS retention is 82% after 10 yr baking at 200 °C.",
author = "Wanlin Zhu and Fan He and John Hayden and Yang, {Jung In} and Pannawit Tipsawat and Maria, {Jon Paul} and Susan Trolier-McKinstry",
note = "Funding Information: The authors gratefully acknowledge funding from Defense Advanced Research Projects Agency (DARPA) through the Tunable Ferroelectric Nitrides (TUFEN), Program Grant Nos. HR0011-20-9-0047 and W911NF-20-2-0274 for identification of the optimal synthesis conditions and the fatigue and retention measurements. Preparation of the ferroelectric films used for this study and analysis of the retention data were supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences Energy Frontier Research Centers Program under Award No. DE-SC0021118. The authors would also like to thank Professor Geoff Brennecka of the Colorado School of Mines for helpful discussions. Publisher Copyright: {\textcopyright} 2023 Author(s).",
year = "2023",
month = jun,
day = "12",
doi = "10.1063/5.0152821",
language = "English (US)",
volume = "122",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "24",
}