Exceptional high temperature retention in Al0.93B0.07N films

Wanlin Zhu, Fan He, John Hayden, Jung In Yang, Pannawit Tipsawat, Jon Paul Maria, Susan Trolier-McKinstry

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

This paper reports the retention behavior for Al0.93B0.07N thin films, a member of the novel family of wurtzite ferroelectrics. Our experiments suggest that bipolar cycling of metal (Pt/W)/Al0.93B0.07N/W/Al2O3 film stacks first induced wake-up and then a region of constant switchable polarization. The films showed excellent retention of the stored polarization state. As expected, data retention was slightly inferior in the opposite state (OS) measurements. However, it is noted that even after 3.6 × 106 s (1000 h) at 200 °C, the OS signal margin still exceeded 200 μC/cm2. The predicted OS retention is 82% after 10 yr baking at 200 °C.

Original languageEnglish (US)
Article number242902
JournalApplied Physics Letters
Volume122
Issue number24
DOIs
StatePublished - Jun 12 2023

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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