Exceptional high temperature retention in Al0.93B0.07N films

Wanlin Zhu; Fan He; John Hayden; Jung In Yang; Pannawit Tipsawat; Jon Paul Maria; Susan Trolier-McKinstry

doi:10.1063/5.0152821

Exceptional high temperature retention in Al_0.93B_0.07N films

Wanlin Zhu
, Fan He
, John Hayden
, Jung In Yang
, Pannawit Tipsawat
, Jon Paul Maria
, Susan Trolier-McKinstry

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

This paper reports the retention behavior for Al_0.93B_0.07N thin films, a member of the novel family of wurtzite ferroelectrics. Our experiments suggest that bipolar cycling of metal (Pt/W)/Al_0.93B_0.07N/W/Al₂O₃ film stacks first induced wake-up and then a region of constant switchable polarization. The films showed excellent retention of the stored polarization state. As expected, data retention was slightly inferior in the opposite state (OS) measurements. However, it is noted that even after 3.6 × 10⁶ s (1000 h) at 200 °C, the OS signal margin still exceeded 200 μC/cm². The predicted OS retention is 82% after 10 yr baking at 200 °C.

Original language	English (US)
Article number	242902
Journal	Applied Physics Letters
Volume	122
Issue number	24
DOIs	https://doi.org/10.1063/5.0152821
State	Published - Jun 12 2023

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/5.0152821

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title = "Exceptional high temperature retention in Al0.93B0.07N films",

abstract = "This paper reports the retention behavior for Al0.93B0.07N thin films, a member of the novel family of wurtzite ferroelectrics. Our experiments suggest that bipolar cycling of metal (Pt/W)/Al0.93B0.07N/W/Al2O3 film stacks first induced wake-up and then a region of constant switchable polarization. The films showed excellent retention of the stored polarization state. As expected, data retention was slightly inferior in the opposite state (OS) measurements. However, it is noted that even after 3.6 × 106 s (1000 h) at 200 °C, the OS signal margin still exceeded 200 μC/cm2. The predicted OS retention is 82\% after 10 yr baking at 200 °C.",

author = "Wanlin Zhu and Fan He and John Hayden and Yang, \{Jung In\} and Pannawit Tipsawat and Maria, \{Jon Paul\} and Susan Trolier-McKinstry",

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T1 - Exceptional high temperature retention in Al0.93B0.07N films

AU - Zhu, Wanlin

AU - He, Fan

AU - Hayden, John

AU - Yang, Jung In

AU - Tipsawat, Pannawit

AU - Maria, Jon Paul

AU - Trolier-McKinstry, Susan

PY - 2023/6/12

Y1 - 2023/6/12

N2 - This paper reports the retention behavior for Al0.93B0.07N thin films, a member of the novel family of wurtzite ferroelectrics. Our experiments suggest that bipolar cycling of metal (Pt/W)/Al0.93B0.07N/W/Al2O3 film stacks first induced wake-up and then a region of constant switchable polarization. The films showed excellent retention of the stored polarization state. As expected, data retention was slightly inferior in the opposite state (OS) measurements. However, it is noted that even after 3.6 × 106 s (1000 h) at 200 °C, the OS signal margin still exceeded 200 μC/cm2. The predicted OS retention is 82% after 10 yr baking at 200 °C.

AB - This paper reports the retention behavior for Al0.93B0.07N thin films, a member of the novel family of wurtzite ferroelectrics. Our experiments suggest that bipolar cycling of metal (Pt/W)/Al0.93B0.07N/W/Al2O3 film stacks first induced wake-up and then a region of constant switchable polarization. The films showed excellent retention of the stored polarization state. As expected, data retention was slightly inferior in the opposite state (OS) measurements. However, it is noted that even after 3.6 × 106 s (1000 h) at 200 °C, the OS signal margin still exceeded 200 μC/cm2. The predicted OS retention is 82% after 10 yr baking at 200 °C.

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ER -

Exceptional high temperature retention in Al_0.93B_0.07N films

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