Exchange biasing of the ferromagnetic semiconductor Ga 1-xMn xAs

K. F. Eid; M. B. Stone; K. C. Ku; O. Maksimov; P. Schiffer; N. Samarth; T. C. Shin; C. J. Palmstrøm

doi:10.1063/1.1787945

Exchange biasing of the ferromagnetic semiconductor Ga _1-xMn _xAs

K. F. Eid, M. B. Stone, K. C. Ku, O. Maksimov, P. Schiffer, N. Samarth, T. C. Shin, C. J. Palmstrøm

Research output: Contribution to journal › Article › peer-review

55 Scopus citations

Abstract

The exchange coupling of the ferromagnetic semiconductor Ga _1-xMn _xAs was investigated. A low temperature molecular beam epitaxy was used for the growth of the sample on (001) semi-insulating, epi-ready GaAs substrates. A comparison of the blocking temperature of the antiferromagnet (MnO) and the Curie temperature of the ferromagnet was performed. The dependence of the hysteresis loop parameters on the magnitude of the cooling fields was also investigated. From Rutherford backscattering (RBS) measurements, an increase in the channeling minimum yield, and an enhancement of the Ga channeling interface peak by ∼1×10 ¹⁵ atoms/cm ² were observed.

Original language	English (US)
Pages (from-to)	1556-1558
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	9
DOIs	https://doi.org/10.1063/1.1787945
State	Published - Aug 30 2004

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1787945

Cite this

@article{a7a56468e5bd4c47920bb126118eb399,

title = "Exchange biasing of the ferromagnetic semiconductor Ga 1-xMn xAs",

abstract = "The exchange coupling of the ferromagnetic semiconductor Ga 1-xMn xAs was investigated. A low temperature molecular beam epitaxy was used for the growth of the sample on (001) semi-insulating, epi-ready GaAs substrates. A comparison of the blocking temperature of the antiferromagnet (MnO) and the Curie temperature of the ferromagnet was performed. The dependence of the hysteresis loop parameters on the magnitude of the cooling fields was also investigated. From Rutherford backscattering (RBS) measurements, an increase in the channeling minimum yield, and an enhancement of the Ga channeling interface peak by ∼1×10 15 atoms/cm 2 were observed.",

author = "Eid, {K. F.} and Stone, {M. B.} and Ku, {K. C.} and O. Maksimov and P. Schiffer and N. Samarth and Shin, {T. C.} and Palmstr{\o}m, {C. J.}",

note = "Funding Information: This research has been supported by the DARPA-SPINS program under Grant Nos. N00014-99-1093, -99-1-1005, -00-1-0951, and -01-1-0830, by ONR N00014-99-1-0071 and by NSF DMR 01-01318. We thank J. Bass for useful discussions.",

year = "2004",

month = aug,

day = "30",

doi = "10.1063/1.1787945",

language = "English (US)",

volume = "85",

pages = "1556--1558",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Exchange biasing of the ferromagnetic semiconductor Ga 1-xMn xAs

AU - Eid, K. F.

AU - Stone, M. B.

AU - Ku, K. C.

AU - Maksimov, O.

AU - Schiffer, P.

AU - Samarth, N.

AU - Shin, T. C.

AU - Palmstrøm, C. J.

N1 - Funding Information: This research has been supported by the DARPA-SPINS program under Grant Nos. N00014-99-1093, -99-1-1005, -00-1-0951, and -01-1-0830, by ONR N00014-99-1-0071 and by NSF DMR 01-01318. We thank J. Bass for useful discussions.

PY - 2004/8/30

Y1 - 2004/8/30

N2 - The exchange coupling of the ferromagnetic semiconductor Ga 1-xMn xAs was investigated. A low temperature molecular beam epitaxy was used for the growth of the sample on (001) semi-insulating, epi-ready GaAs substrates. A comparison of the blocking temperature of the antiferromagnet (MnO) and the Curie temperature of the ferromagnet was performed. The dependence of the hysteresis loop parameters on the magnitude of the cooling fields was also investigated. From Rutherford backscattering (RBS) measurements, an increase in the channeling minimum yield, and an enhancement of the Ga channeling interface peak by ∼1×10 15 atoms/cm 2 were observed.

AB - The exchange coupling of the ferromagnetic semiconductor Ga 1-xMn xAs was investigated. A low temperature molecular beam epitaxy was used for the growth of the sample on (001) semi-insulating, epi-ready GaAs substrates. A comparison of the blocking temperature of the antiferromagnet (MnO) and the Curie temperature of the ferromagnet was performed. The dependence of the hysteresis loop parameters on the magnitude of the cooling fields was also investigated. From Rutherford backscattering (RBS) measurements, an increase in the channeling minimum yield, and an enhancement of the Ga channeling interface peak by ∼1×10 15 atoms/cm 2 were observed.

UR - http://www.scopus.com/inward/record.url?scp=5044235422&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=5044235422&partnerID=8YFLogxK

U2 - 10.1063/1.1787945

DO - 10.1063/1.1787945

M3 - Article

AN - SCOPUS:5044235422

SN - 0003-6951

VL - 85

SP - 1556

EP - 1558

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Exchange biasing of the ferromagnetic semiconductor Ga _1-xMn _xAs

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this