Exciton localization in MgxZnyCd1-x-ySe alloy

O. Maksimov, W. H. Wang, N. Samarth, M. Muñoz, M. C. Tamargo

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


We report photoluminescence and reflectivity measurements of Mg xZnyCd1-x-ySe epitaxial layers (0 < x < 0.53) grown by molecular beam epitaxy on InP (100) substrates. Significant emission line broadening, increase in activation energy and Stokes shift are monitored with increasing Mg content. For MgxZnyCd 1-x-ySe samples with large Mg content (x > 0.3), we observe an anomalous temperature dependence of both the emission energy and line broadening. This behavior is assigned to the emission from localized states. Different mechanisms of carrier localization are discussed and exciton localization on statistical CdSe clusters is proposed to be the most likely one.

Original languageEnglish (US)
Pages (from-to)495-498
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Issue number3
StatePublished - Mar 2004

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


Dive into the research topics of 'Exciton localization in MgxZnyCd1-x-ySe alloy'. Together they form a unique fingerprint.

Cite this