Exciton localization in MgxZnyCd1-x-ySe alloy

O. Maksimov; W. H. Wang; N. Samarth; M. Muñoz; M. C. Tamargo

doi:10.1002/pssb.200304216

Exciton localization in Mg_xZn_yCd_1-x-ySe alloy

O. Maksimov, W. H. Wang, N. Samarth, M. Muñoz, M. C. Tamargo

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3 Scopus citations

Abstract

We report photoluminescence and reflectivity measurements of Mg _xZn_yCd_1-x-ySe epitaxial layers (0 < x < 0.53) grown by molecular beam epitaxy on InP (100) substrates. Significant emission line broadening, increase in activation energy and Stokes shift are monitored with increasing Mg content. For Mg_xZn_yCd _1-x-ySe samples with large Mg content (x > 0.3), we observe an anomalous temperature dependence of both the emission energy and line broadening. This behavior is assigned to the emission from localized states. Different mechanisms of carrier localization are discussed and exciton localization on statistical CdSe clusters is proposed to be the most likely one.

Original language	English (US)
Pages (from-to)	495-498
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	241
Issue number	3
DOIs	https://doi.org/10.1002/pssb.200304216
State	Published - Mar 2004

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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abstract = "We report photoluminescence and reflectivity measurements of Mg xZnyCd1-x-ySe epitaxial layers (0 < x < 0.53) grown by molecular beam epitaxy on InP (100) substrates. Significant emission line broadening, increase in activation energy and Stokes shift are monitored with increasing Mg content. For MgxZnyCd 1-x-ySe samples with large Mg content (x > 0.3), we observe an anomalous temperature dependence of both the emission energy and line broadening. This behavior is assigned to the emission from localized states. Different mechanisms of carrier localization are discussed and exciton localization on statistical CdSe clusters is proposed to be the most likely one.",

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T1 - Exciton localization in MgxZnyCd1-x-ySe alloy

AU - Maksimov, O.

AU - Wang, W. H.

AU - Samarth, N.

AU - Muñoz, M.

AU - Tamargo, M. C.

PY - 2004/3

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N2 - We report photoluminescence and reflectivity measurements of Mg xZnyCd1-x-ySe epitaxial layers (0 < x < 0.53) grown by molecular beam epitaxy on InP (100) substrates. Significant emission line broadening, increase in activation energy and Stokes shift are monitored with increasing Mg content. For MgxZnyCd 1-x-ySe samples with large Mg content (x > 0.3), we observe an anomalous temperature dependence of both the emission energy and line broadening. This behavior is assigned to the emission from localized states. Different mechanisms of carrier localization are discussed and exciton localization on statistical CdSe clusters is proposed to be the most likely one.

AB - We report photoluminescence and reflectivity measurements of Mg xZnyCd1-x-ySe epitaxial layers (0 < x < 0.53) grown by molecular beam epitaxy on InP (100) substrates. Significant emission line broadening, increase in activation energy and Stokes shift are monitored with increasing Mg content. For MgxZnyCd 1-x-ySe samples with large Mg content (x > 0.3), we observe an anomalous temperature dependence of both the emission energy and line broadening. This behavior is assigned to the emission from localized states. Different mechanisms of carrier localization are discussed and exciton localization on statistical CdSe clusters is proposed to be the most likely one.

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Exciton localization in Mg_xZn_yCd_1-x-ySe alloy

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