Experimental demonstration of 100nm channel length In0.53Ga 0.47As-based vertical inter-band tunnel field effect transistors (TFETs) for ultra low-power logic and SRAM applications

S. Mookerjea; D. Mohata; R. Krishnan; J. Singh; A. Vallett; A. Ali; T. Mayer; Vijaykrishnan Narayanan; D. Schlom; A. Liu; S. Datta

doi:10.1109/IEDM.2009.5424355

Experimental demonstration of 100nm channel length In_0.53Ga _0.47As-based vertical inter-band tunnel field effect transistors (TFETs) for ultra low-power logic and SRAM applications

S. Mookerjea, D. Mohata, R. Krishnan, J. Singh, A. Vallett, A. Ali, T. Mayer, Vijaykrishnan Narayanan, D. Schlom, A. Liu, S. Datta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

92 Scopus citations

Abstract

Vertical In_0.53Ga_0.47As tunnel field effect transistors (TFETs) with 100nm channel length and highk/metal gate stack are demonstrated with high I_on/I_off ratio (>10 ⁴). At V_DS = 0.75V, a record on-current of 20μA/μm is achieved due to higher tunneling rate in narrow tunnel gap In. _0.53Ga_0.47As. The TFETs exhibit gate bias dependent NDR characteristics at room temperature under forward bias confirming band to band tunneling. The measured data are in excellent agreement with two-dimensional numerical simulation at all drain biases. A novel 6T TFET SRAM cell using virtual ground assist is demonstrated despite the asymmetric source/drain configuration of TFETs.

Original language	English (US)
Title of host publication	2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
DOIs	https://doi.org/10.1109/IEDM.2009.5424355
State	Published - Dec 1 2009
Event	2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States Duration: Dec 7 2009 → Dec 9 2009

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2009 International Electron Devices Meeting, IEDM 2009
Country/Territory	United States
City	Baltimore, MD
Period	12/7/09 → 12/9/09

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2009.5424355

Cite this

Mookerjea, S., Mohata, D., Krishnan, R., Singh, J., Vallett, A., Ali, A., Mayer, T., Narayanan, V., Schlom, D., Liu, A., & Datta, S. (2009). Experimental demonstration of 100nm channel length In_0.53Ga _0.47As-based vertical inter-band tunnel field effect transistors (TFETs) for ultra low-power logic and SRAM applications. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest Article 5424355 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2009.5424355

Mookerjea, S. ; Mohata, D. ; Krishnan, R. et al. / Experimental demonstration of 100nm channel length In_0.53Ga _0.47As-based vertical inter-band tunnel field effect transistors (TFETs) for ultra low-power logic and SRAM applications. 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. (Technical Digest - International Electron Devices Meeting, IEDM).

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title = "Experimental demonstration of 100nm channel length In0.53Ga 0.47As-based vertical inter-band tunnel field effect transistors (TFETs) for ultra low-power logic and SRAM applications",

abstract = "Vertical In0.53Ga0.47As tunnel field effect transistors (TFETs) with 100nm channel length and highk/metal gate stack are demonstrated with high Ion/Ioff ratio (>10 4). At VDS = 0.75V, a record on-current of 20μA/μm is achieved due to higher tunneling rate in narrow tunnel gap In. 0.53Ga0.47As. The TFETs exhibit gate bias dependent NDR characteristics at room temperature under forward bias confirming band to band tunneling. The measured data are in excellent agreement with two-dimensional numerical simulation at all drain biases. A novel 6T TFET SRAM cell using virtual ground assist is demonstrated despite the asymmetric source/drain configuration of TFETs.",

author = "S. Mookerjea and D. Mohata and R. Krishnan and J. Singh and A. Vallett and A. Ali and T. Mayer and Vijaykrishnan Narayanan and D. Schlom and A. Liu and S. Datta",

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doi = "10.1109/IEDM.2009.5424355",

language = "English (US)",

isbn = "9781424456406",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

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note = "2009 International Electron Devices Meeting, IEDM 2009 ; Conference date: 07-12-2009 Through 09-12-2009",

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Mookerjea, S, Mohata, D, Krishnan, R, Singh, J, Vallett, A, Ali, A, Mayer, T, Narayanan, V, Schlom, D, Liu, A & Datta, S 2009, Experimental demonstration of 100nm channel length In_0.53Ga _0.47As-based vertical inter-band tunnel field effect transistors (TFETs) for ultra low-power logic and SRAM applications. in 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest., 5424355, Technical Digest - International Electron Devices Meeting, IEDM, 2009 International Electron Devices Meeting, IEDM 2009, Baltimore, MD, United States, 12/7/09. https://doi.org/10.1109/IEDM.2009.5424355

Experimental demonstration of 100nm channel length In_0.53Ga _0.47As-based vertical inter-band tunnel field effect transistors (TFETs) for ultra low-power logic and SRAM applications. / Mookerjea, S.; Mohata, D.; Krishnan, R. et al.
2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. 5424355 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Krishnan, R.

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AU - Vallett, A.

AU - Ali, A.

AU - Mayer, T.

AU - Narayanan, Vijaykrishnan

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AU - Liu, A.

AU - Datta, S.

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AB - Vertical In0.53Ga0.47As tunnel field effect transistors (TFETs) with 100nm channel length and highk/metal gate stack are demonstrated with high Ion/Ioff ratio (>10 4). At VDS = 0.75V, a record on-current of 20μA/μm is achieved due to higher tunneling rate in narrow tunnel gap In. 0.53Ga0.47As. The TFETs exhibit gate bias dependent NDR characteristics at room temperature under forward bias confirming band to band tunneling. The measured data are in excellent agreement with two-dimensional numerical simulation at all drain biases. A novel 6T TFET SRAM cell using virtual ground assist is demonstrated despite the asymmetric source/drain configuration of TFETs.

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Mookerjea S, Mohata D, Krishnan R, Singh J, Vallett A, Ali A et al. Experimental demonstration of 100nm channel length In_0.53Ga _0.47As-based vertical inter-band tunnel field effect transistors (TFETs) for ultra low-power logic and SRAM applications. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. 5424355. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2009.5424355