Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching

Sang Woo Han; Jianan Song; Sang Ha Yoo; Ziguang Ma; Robert M. Lavelle; David W. Snyder; Joan M. Redwing; Thomas N. Jackson; Rongming Chu

doi:10.1109/LED.2020.3029619

Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching

Sang Woo Han, Jianan Song, Sang Ha Yoo, Ziguang Ma, Robert M. Lavelle, David W. Snyder, Joan M. Redwing, Thomas N. Jackson, Rongming Chu

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

This letter reports an experimental demonstration of charge-balanced GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs). Charge balance between the n-type delta-doping and the p-type doping was achieved by adjusting the thickness of the pGaN. This device structure enabled scaling of breakdown voltage to over 3 kV, and dynamic switching up to 2.8 kV without using any field-plate.

Original language	English (US)
Article number	9217445
Pages (from-to)	1758-1761
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	41
Issue number	12
DOIs	https://doi.org/10.1109/LED.2020.3029619
State	Published - Dec 2020

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2020.3029619

Cite this

@article{a8eb95005e1c4c5d90d6305ca3841e33,

title = "Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching",

abstract = "This letter reports an experimental demonstration of charge-balanced GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs). Charge balance between the n-type delta-doping and the p-type doping was achieved by adjusting the thickness of the pGaN. This device structure enabled scaling of breakdown voltage to over 3 kV, and dynamic switching up to 2.8 kV without using any field-plate.",

author = "Han, {Sang Woo} and Jianan Song and Yoo, {Sang Ha} and Ziguang Ma and Lavelle, {Robert M.} and Snyder, {David W.} and Redwing, {Joan M.} and Jackson, {Thomas N.} and Rongming Chu",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2020",

month = dec,

doi = "10.1109/LED.2020.3029619",

language = "English (US)",

volume = "41",

pages = "1758--1761",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching

AU - Han, Sang Woo

AU - Song, Jianan

AU - Yoo, Sang Ha

AU - Ma, Ziguang

AU - Lavelle, Robert M.

AU - Snyder, David W.

AU - Redwing, Joan M.

AU - Jackson, Thomas N.

AU - Chu, Rongming

PY - 2020/12

Y1 - 2020/12

N2 - This letter reports an experimental demonstration of charge-balanced GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs). Charge balance between the n-type delta-doping and the p-type doping was achieved by adjusting the thickness of the pGaN. This device structure enabled scaling of breakdown voltage to over 3 kV, and dynamic switching up to 2.8 kV without using any field-plate.

AB - This letter reports an experimental demonstration of charge-balanced GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs). Charge balance between the n-type delta-doping and the p-type doping was achieved by adjusting the thickness of the pGaN. This device structure enabled scaling of breakdown voltage to over 3 kV, and dynamic switching up to 2.8 kV without using any field-plate.

UR - http://www.scopus.com/inward/record.url?scp=85097343640&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85097343640&partnerID=8YFLogxK

U2 - 10.1109/LED.2020.3029619

DO - 10.1109/LED.2020.3029619

M3 - Article

AN - SCOPUS:85097343640

SN - 0741-3106

VL - 41

SP - 1758

EP - 1761

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

M1 - 9217445

ER -

Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this