@article{a8eb95005e1c4c5d90d6305ca3841e33,
title = "Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching",
abstract = "This letter reports an experimental demonstration of charge-balanced GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs). Charge balance between the n-type delta-doping and the p-type doping was achieved by adjusting the thickness of the pGaN. This device structure enabled scaling of breakdown voltage to over 3 kV, and dynamic switching up to 2.8 kV without using any field-plate.",
author = "Han, {Sang Woo} and Jianan Song and Yoo, {Sang Ha} and Ziguang Ma and Lavelle, {Robert M.} and Snyder, {David W.} and Redwing, {Joan M.} and Jackson, {Thomas N.} and Rongming Chu",
note = "Funding Information: Manuscript received September 21, 2020; revised October 5, 2020; accepted October 5, 2020. Date of publication October 8, 2020; date of current version November 24, 2020. This work was supported in part by the U.S. Department of Energy Advanced Research Projects Agency–Energy directed by Dr. Isik Kizilyalli under Award DEAR0001008. The work of Ziguang Ma and Joan M. Redwing was supported by AFOSR under Award FA9550-19-1-0349. The review of this letter was arranged by Editor R.-H. Horng. (Corresponding author: Sang-Woo Han.) Sang-Woo Han, Jianan Song, Thomas N. Jackson, and Rongming Chu are with the Department of Electrical Engineering, Pennsylvania State University at University Park, University Park, PA 16802 USA (e-mail: sxh1218@psu.edu). Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",
year = "2020",
month = dec,
doi = "10.1109/LED.2020.3029619",
language = "English (US)",
volume = "41",
pages = "1758--1761",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",
}