Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching

Sang Woo Han; Jianan Song; Sang Ha Yoo; Ziguang Ma; Robert M. Lavelle; David W. Snyder; Joan M. Redwing; Thomas N. Jackson; Rongming Chu

doi:10.1109/LED.2020.3029619

Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching

Sang Woo Han
, Jianan Song
, Sang Ha Yoo
, Ziguang Ma
, Robert M. Lavelle
, David W. Snyder
, Joan M. Redwing
, Thomas N. Jackson
, Rongming Chu

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

This letter reports an experimental demonstration of charge-balanced GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs). Charge balance between the n-type delta-doping and the p-type doping was achieved by adjusting the thickness of the pGaN. This device structure enabled scaling of breakdown voltage to over 3 kV, and dynamic switching up to 2.8 kV without using any field-plate.

Original language	English (US)
Article number	9217445
Pages (from-to)	1758-1761
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	41
Issue number	12
DOIs	https://doi.org/10.1109/LED.2020.3029619
State	Published - Dec 2020

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2020.3029619

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title = "Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching",

abstract = "This letter reports an experimental demonstration of charge-balanced GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs). Charge balance between the n-type delta-doping and the p-type doping was achieved by adjusting the thickness of the pGaN. This device structure enabled scaling of breakdown voltage to over 3 kV, and dynamic switching up to 2.8 kV without using any field-plate.",

author = "Han, \{Sang Woo\} and Jianan Song and Yoo, \{Sang Ha\} and Ziguang Ma and Lavelle, \{Robert M.\} and Snyder, \{David W.\} and Redwing, \{Joan M.\} and Jackson, \{Thomas N.\} and Rongming Chu",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2020",

month = dec,

doi = "10.1109/LED.2020.3029619",

language = "English (US)",

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AU - Han, Sang Woo

AU - Song, Jianan

AU - Yoo, Sang Ha

AU - Ma, Ziguang

AU - Lavelle, Robert M.

AU - Snyder, David W.

AU - Redwing, Joan M.

AU - Jackson, Thomas N.

AU - Chu, Rongming

PY - 2020/12

Y1 - 2020/12

N2 - This letter reports an experimental demonstration of charge-balanced GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs). Charge balance between the n-type delta-doping and the p-type doping was achieved by adjusting the thickness of the pGaN. This device structure enabled scaling of breakdown voltage to over 3 kV, and dynamic switching up to 2.8 kV without using any field-plate.

AB - This letter reports an experimental demonstration of charge-balanced GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs). Charge balance between the n-type delta-doping and the p-type doping was achieved by adjusting the thickness of the pGaN. This device structure enabled scaling of breakdown voltage to over 3 kV, and dynamic switching up to 2.8 kV without using any field-plate.

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UR - https://www.scopus.com/pages/publications/85097343640#tab=citedBy

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DO - 10.1109/LED.2020.3029619

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JF - IEEE Electron Device Letters

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M1 - 9217445

ER -

Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching

Abstract

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