Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching

Sang Woo Han, Jianan Song, Sang Ha Yoo, Ziguang Ma, Robert M. Lavelle, David W. Snyder, Joan M. Redwing, Thomas N. Jackson, Rongming Chu

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