Experimental investigation of scalability and transport in In 0.7Ga0.3As multi-gate quantum well FET (MuQFET)

L. Liu; V. Saripalli; V. Narayanan; S. Datta

doi:10.1109/DRC.2011.5994401

Experimental investigation of scalability and transport in In _0.7Ga_0.3As multi-gate quantum well FET (MuQFET)

L. Liu, V. Saripalli, V. Narayanan, S. Datta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Compound semiconductors such as In_0.7Ga_0.3As and InSb are being actively researched as replacement for silicon channel materials for logic applications due to their superior transport properties [1,2]. Planar III-V quantum-well FETs have already demonstrated with superior performance than the state-of-the art Si MOSFETs for low supply voltage (Vcc) applications [1-3]. A key research challenge remains in addressing the scalability of III-V based quantum-well FETs to sub-14 nm node logic applications while still maintaining their excellent transport advantage. In this study, we demonstrate quasi-ballistic operation of non-planar, multi-gate, modulation doped, strained In_0.7Ga_0.3As quantum well FET (MuQFET), combining the electrostatic robustness of multi-gate configuration with the excellent electron mobility of high mobility quantum well channel, In_0.7Ga _0.3As (Figure 1).

Original language	English (US)
Title of host publication	69th Device Research Conference, DRC 2011 - Conference Digest
Pages	17-18
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2011.5994401
State	Published - 2011
Event	69th Device Research Conference, DRC 2011 - Santa Barbara, CA, United States Duration: Jun 20 2011 → Jun 22 2011

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	69th Device Research Conference, DRC 2011
Country/Territory	United States
City	Santa Barbara, CA
Period	6/20/11 → 6/22/11

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2011.5994401

Cite this

@inproceedings{470dca442481449f942d8183beda6da7,

title = "Experimental investigation of scalability and transport in In 0.7Ga0.3As multi-gate quantum well FET (MuQFET)",

abstract = "Compound semiconductors such as In0.7Ga0.3As and InSb are being actively researched as replacement for silicon channel materials for logic applications due to their superior transport properties [1,2]. Planar III-V quantum-well FETs have already demonstrated with superior performance than the state-of-the art Si MOSFETs for low supply voltage (Vcc) applications [1-3]. A key research challenge remains in addressing the scalability of III-V based quantum-well FETs to sub-14 nm node logic applications while still maintaining their excellent transport advantage. In this study, we demonstrate quasi-ballistic operation of non-planar, multi-gate, modulation doped, strained In0.7Ga0.3As quantum well FET (MuQFET), combining the electrostatic robustness of multi-gate configuration with the excellent electron mobility of high mobility quantum well channel, In0.7Ga 0.3As (Figure 1).",

author = "L. Liu and V. Saripalli and V. Narayanan and S. Datta",

year = "2011",

doi = "10.1109/DRC.2011.5994401",

language = "English (US)",

isbn = "9781612842417",

series = "Device Research Conference - Conference Digest, DRC",

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booktitle = "69th Device Research Conference, DRC 2011 - Conference Digest",

note = "69th Device Research Conference, DRC 2011 ; Conference date: 20-06-2011 Through 22-06-2011",

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Liu, L, Saripalli, V, Narayanan, V & Datta, S 2011, Experimental investigation of scalability and transport in In _0.7Ga_0.3As multi-gate quantum well FET (MuQFET). in 69th Device Research Conference, DRC 2011 - Conference Digest., 5994401, Device Research Conference - Conference Digest, DRC, pp. 17-18, 69th Device Research Conference, DRC 2011, Santa Barbara, CA, United States, 6/20/11. https://doi.org/10.1109/DRC.2011.5994401

Experimental investigation of scalability and transport in In _0.7Ga_0.3As multi-gate quantum well FET (MuQFET). / Liu, L.; Saripalli, V.; Narayanan, V. et al.
69th Device Research Conference, DRC 2011 - Conference Digest. 2011. p. 17-18 5994401 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - Compound semiconductors such as In0.7Ga0.3As and InSb are being actively researched as replacement for silicon channel materials for logic applications due to their superior transport properties [1,2]. Planar III-V quantum-well FETs have already demonstrated with superior performance than the state-of-the art Si MOSFETs for low supply voltage (Vcc) applications [1-3]. A key research challenge remains in addressing the scalability of III-V based quantum-well FETs to sub-14 nm node logic applications while still maintaining their excellent transport advantage. In this study, we demonstrate quasi-ballistic operation of non-planar, multi-gate, modulation doped, strained In0.7Ga0.3As quantum well FET (MuQFET), combining the electrostatic robustness of multi-gate configuration with the excellent electron mobility of high mobility quantum well channel, In0.7Ga 0.3As (Figure 1).

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