TY - JOUR
T1 - Experimental staggered-source and N+ pocket-doped channel III-V tunnel field-effect transistors and their scalabilities
AU - Mohata, Dheeraj
AU - Mookerjea, Saurabh
AU - Agrawal, Ashish
AU - Li, Yuanyuan
AU - Mayer, Theresa
AU - Narayanan, Vijaykrishnan
AU - Liu, Amy
AU - Loubychev, Dmitri
AU - Fastenau, Joel
AU - Datta, Suman
PY - 2011/2
Y1 - 2011/2
N2 - In this paper, we experimentally demonstrate 100% enhancement in drive current (ION) over In0.53Ga0.47As n-channel homojunction tunnel field-effect transistor (TFET) by replacing In 0.53Ga0.47As source with a moderately staggered and lattice-matched GaAs0.5Sb0.5. The enhancement is also compared with In0.53Ga0.47As N+ pocket (δ)-doped channel homojunction TFET. Utilizing calibrated numerical simulations, we extract the effective scaling length (λeff) for the double gate, thin-body configuration of the staggered heterojunction and δ-doped channel TFETs. The extracted λeff is shown to be lower than the geometrical scaling length, particularly in the highly staggered-source heterojunction TFET due to the reduced channel side component of the tunnel junction width, resulting in improved device scalability.
AB - In this paper, we experimentally demonstrate 100% enhancement in drive current (ION) over In0.53Ga0.47As n-channel homojunction tunnel field-effect transistor (TFET) by replacing In 0.53Ga0.47As source with a moderately staggered and lattice-matched GaAs0.5Sb0.5. The enhancement is also compared with In0.53Ga0.47As N+ pocket (δ)-doped channel homojunction TFET. Utilizing calibrated numerical simulations, we extract the effective scaling length (λeff) for the double gate, thin-body configuration of the staggered heterojunction and δ-doped channel TFETs. The extracted λeff is shown to be lower than the geometrical scaling length, particularly in the highly staggered-source heterojunction TFET due to the reduced channel side component of the tunnel junction width, resulting in improved device scalability.
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U2 - 10.1143/APEX.4.024105
DO - 10.1143/APEX.4.024105
M3 - Article
AN - SCOPUS:79951619845
SN - 1882-0778
VL - 4
JO - Applied Physics Express
JF - Applied Physics Express
IS - 2
M1 - 24105
ER -